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Dr. Samaresh Das

Assistant Professor

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Samaresh
  • About
  • Research Interest
  • Contact Information
  • Funded Project
  • Student Project
  • PhD Scholar
  • Publication

About

Dr. Samaresh Das received the M. Sc. and PhD degree in Physics from Indian Institute of Technology Kharagpur, India, in 2005 and 2011, respectively. At Indian Institute of Technology, his research involved on Ge quantum dot based floating gates, light emitters and photo-detectors on silicon substrate. He then worked as a researcher in the Ultimate Silicon Device Group led by Jean-Pierre Colinge at Tyndall National Institute, Ireland. There he worked on the fabrication and characterization of Junctionless Nanowire Trigate MOSFET. He worked as a Research Scientist at Hitachi Cambridge Lab-Cavendish Lab, University of Cambridge on Quantum Information Project for the development of scalable silicon charge qubit from Nov. 2012 to Sept. 2014. In September 2014, he joined Centre for Applied Research in Electronics, Indian Institute of Technology Delhi as an Assistant Professor.

Course Offered

  • CRL 722 - RF AND MICROWAVE SOLID STATE DEVICES

  • CRL 725 - TECHNOLOGY OF RF AND MICROWAVE SOLID STATE DEVICES

  • CRL 723 - FABRICATION TECHNIQUES FOR RF & MICROWAVE DEVICES

  • CRL 732 - SELECTED TOPICS IN RFDT-II: Quantum Information Technology: Experiment

Research Interest

Optoelectronic Devices: Visible and Infrared Photodetectors, THz detectors

    High sensitivity Junctionless Phototransistor           MoS2/Si heterojunction high speed photodetector

Samaresh

Applied Physics Letters 108 (6), 063113                  Sci Rep. 2017; 7: 44243

Bio and Gas Sensors: NW MOSFET, Metalloprotein Transistor, Metal oxide Nanostructures, 2D materials

    Metalloprotein based scalable field effect transistor           Metal oxide based room temperature gas sensor

Samaresh

Sensors and Actuators B: Chemical 246, 363-369                 SST 31 (11), 115010

Quantum and Memory Devices

Samaresh

  Quantum Electron Device                        Flexible Memory Device

Contact Information

Email samareshdas@care.iitd.ac.in
Telephone (O) +91-11-26596036
Facsimile +91-11-26591103, 26596219
Address Centre for Applied Research in Electronics,
Indian Institute of Technology, Delhi
Hauz Khas, New Delhi - 110 016, INDIA










Funded Projects

  1. Fabrication and Characterization of High Efficiency Scalable Visible to Infrared Junctionless Phototransistors for Silicon Photonics, 73.81 Lakh, Science and Engineering Research Board (SERB), PI: Dr. Samaresh Das

  2. Quantum Electron Devices:Single Electron Transistors, 25 Lakh, MeitY, Govt. of India, PI: Dr. Samaresh Das

  3. MEMS-based non-volatile memory (NVM) for harsh environment data storage, 54.84 Lakh Science and Engineering Research Board (SERB), PI: Dr. Pushparaj Singh, Co-PI: Dr. Samaresh Das

M.Tech Project

Ongoing

  1. Abhinit Kumar, Fabrication of silicon Nano crystal in SiO2 matrix and its application in photonic devices, Supervisor: Dr. Samaresh Das, 2017

  2. Ankita Rani, Fabrication of silicon field emission arrays and their characterization Supervisor: Dr. Samaresh Das and Dr Santanu Ghosh, 2017

  3. Mohd Saleem Pasha, Fabrication and Characterization of NiGe/n-Ge Schottky Diodes and NiGe/n-Ge Schottky based Photodetectors, Supervisor: Dr. Samaresh Das, 2017

  4. Akshay Potuwar, Tungsten Nanocrystals embedded in high-k dielectric for memory device applications, Supervisor: Dr. Samaresh Das, 2017

Completed

  1. Jyoti Sharma , SILICON NANOWIRE PHOTODIODE FABRICATION AND CHARACTERISATION, Supervisor: Dr. Samaresh Das, 2016

  2. Deepam Dubey , FABRICATION AND CHARACTERIZATION OF METAL-OXIDE THIN FILM RESISTIVE SWITCH MEMORY DEVICES, Supervisor: Dr. Samaresh Das, 2016

  3. Gaurav Kumar , DESIGN OPTIMIZATION AND FABRICATION OF VIBRATION BASED PIEZOELECTRIC ENERGY HARVESTER, Supervisor: Dr. Samaresh Das and Prof. Sudhir Chandra, 2016

Ongoing

    Samaresh Veerendra Dhyani

    Area  : High Efficiency Photodetector Based on Semiconductor Nanostructures for Visible to Infrared Wavelengths

    Fellowship  : Vishveshwarya Fellowship
    Supervisor : Dr. Samaresh Das

    Samaresh Priyanka Dwivedi

    Area  : MEMS Integrated Semiconductor Nanostructures for Sensing applications

    Fellowship  : Institute Fellowship
    Supervisor : Dr. S. Dhanekar and Dr. Samaresh Das

    Samaresh Wasi Uddin

    Area  : Quantum Electron Devices Based on Group-IV Semiconductor

    Fellowship  : Vishveshwarya Fellowship
    Supervisor : Dr. Samaresh Das

    Samaresh Akshay Moudgil

    Area  : High Efficiency Electronic Sensors based on Field Effect Devices

    Fellowship  : Vishveshwarya Fellowship
    Supervisor : Dr. Samaresh Das

Journals

  1. N Kalyani, A Moudgil, S Das, P Mishra, "Metalloprotein based scalable field effect transistor with enhanced switching behaviour", Sensors and Actuators B: Chemical 246, 363-369 (2017).

  2. RK Singha, S Manna, R Bar, S Das, SK Ray, "Surface potential, charging and local current transport of individual Ge quantum dots grown by molecular beam epitaxy", Applied Surface Science 407, 418-426 (2017).

  3. P Dwivedi, S Das, S Dhanekar, "Polymer functionalized nanostructured porous silicon for selective water vapor sensing at room temperature", Superlattices and Microstructures 104, 547-552 (2017).

  4. V Dhyani, S Das, "High-Speed Scalable Silicon-MoS2 PN Heterojunction Photodetectors", Scientific Reports 7 (2017).

  5. Priyanka Dwivedi, Saakshi Dhanekar, and Samaresh Das, "Role of TiO 2 functionalization on nano- porous silicon for selective alcohol sensing at room temperature", Journal of Materials Science & Technology, Elsevier (2016).

  6. Priyanka Dwivedi, Saakshi Dhanekar, and Samaresh Das. “Synthesis of α -MoO 3 Nano-Flakes by Dry Oxidation of RF Sputtered Mo Thin Films and Their Application in Gas Sensing”, Semiconductor Science and Technology 31 (11). IOP Publishing: 115010 (2016).

  7. Samaresh Das, Veerendra Dhyani, Yordan M. Georgiev and David A. Williams, "High sensitivity silicon single nanowire junctionless phototransistor", Appl. Phys. Lett. 108, 063113 (2016)

  8. Enhancement of photoluminescence intensity of erbium doped silica containing Ge nanocrystals: distance dependent interactions S Manna, R Aluguri, R Bar, S Das, N Prtljaga, L Pavesi, SK Ray Nanotechnology 26 (4), 045202 (2015)

  9. Y. M. Georgiev, N. Petkov, B. MaCarthy, R. Yu, V. Djara, D. O'Connel, O. Lotty, A. M. Nightingale, N. Thamsumet, J. C. deMello, A. Blake, S. Das, J. D. Holmes, "Fully CMOS-compatible top-down fabrication of sub-50 nm silicon nanowire sensing devices", Microelectronic Engineering 118, 47 (2014).

  10. R. Yu, Y. M. Georgiev, S. Das, R. Hobbs, I. M. Povey, N. Petkov, M. Shayesteh, D. O'Cornell, J. D. Holmes, and R. Duffy, "Junctionless nanowire transistor fabricated with high mobility Ge channel", PSS Rapid Research Letters 1, 65 (2014).

  11. 1. S. Manna, R. Aluguri, A. Katiyar, S. Das, A. Laha, H. Osten, and S. K. Ray, "MBE grown Si and Si1-xGex quantum dots embedded within epitaxial Gd2O3 on Si (111) substrate for floating gate memory device", Nanotechnology24, 505709(2013).

  12. S Manna, R Aluguri, S Das, RK Singha, SK Ray, “Electroluminescence from metal-insulator-semiconductor tunneling diodes using compressively strained Ge on Si0.5Ge0.5 virtual substrates”, Optics Express21, 28219-28231(2013).

  13. S Das, R Yu, K Cherkaoui, P Razavi, S Barraud, “Performance of 22 nm Tri-Gate Junctionless Nanowire Transistors at Elevated Temperatures”, ECS Solid State Letters 2 (8), Q62-Q65 (2013).

  14. R Yu, AN Nazarov, VS Lysenko, S Das, I Ferain, P Razavi, M Shayesteh, A Kranti, R Duffy, J-P Colinge, “Impact ionization induced dynamic floating body effect in junctionless transistors” , Solid-State Electronics 90, 28-33 (2013).

  15. A Guchhait, S Das, SK Ray, AJ Pal, “Photoinduced Hole-Transfer in Nanoparticle-Dye Hybrid Composites: A Route for Exciton Dissociation Leading to Photovoltaic Devices” ,Nanoscience and Nanotechnology Letters 5 (1), 13-18 (2013).

  16. S Das, S Manna, RK Singha, R Aluguri, SK Ray, “Effect of growth temperature and post-growth annealing on luminescence properties of molecular beam epitaxy grown single layer Ge quantum dots” ,Journal of Applied Physics 113 (6), 063101-063101-8 (2013).

  17. S K Ray, S Maikap, W Banerjee and S Das, “Nanocrystals for silicon-based light-emitting and memory devices” ,J. Phys. D: Appl. Physics, 46, 153001 (2013).

  18. Y Yacoby, N Elfassy, SK Ray, RK Singha, S Das, E Cohen, S Yochelis, R Clarke, “Morphology and growth of capped Ge/Si quantum dots”, Journal of Nanoparticle Research 15 (5), 1-7 (2013).

  19. Renan Doria Trevisoli, Rodrigo Trevisoli Doria, Michelly de Souza, Samaresh Das, Isabelle Ferain, Marcelo Antonio Pavanello, “Surface Potential-Based Drain Current Analytical Model for Triple-Gate Junctionless Nanowire Transistors”, IEEE Transactions on Electron Devices 59, 3510 (2012).

  20. T. Rudenko, A. Nazarov, I Ferain,S Das, R Yu, S Barraud, P Razavi, ‘Mobility enhancement effect in heavily doped junctionless nanowire SOI MOSFET’, Applied Physics Letters 101, 213502 (2012).

  21. Renan Doria Trevisoli, Rodrigo Trevisoli Doria, Michelly de Souza, Samaresh Das, Isabelle Ferain, Marcelo Antonio Pavanello, “The zero temperature coefficient in junctionless nanowire transistors”, Applied Physics Letters 101, 062101 (2012).

  22. Ran Yu, Samaresh Das, Isabelle Ferain, Pedram Razavi, Maryam Shayesteh, Abhinav Kranti, Ray Duffy, and Jean-Pierre Colinge, “Device design and estimated performance for P-type junctionless transistors on bulk germanium substrates”, IEEE Transactions on Electron Devices 59, 2308 (2012).

  23. Pedram Razavi, Giiogos Fagas, Isabelle Ferain, Ran Yu, Samaresh Das, and Jean-Pierre Colinge “Influence of Channel Material Properties on Performance of Nanowire Transistors”, Journal of Applied Physics 111, 124509 (2012).

  24. Rakesh Aluguri, Samaresh Das, Rajkumar Singha, Samit K Ray, “Size dependent charge storage characteristics of MBE grown Ge nanocrystals on surface oxidized Si”, Current Applied Physics (2012), doi: 10.1016/j.cap.2012.06.002.

  25. S. Das, R. Aluguri, S. Manna, R. K. Singha, A. Dhar, L. Pavesi and S. K. Ray, “Optical and electrical properties of undoped and doped Ge nanocrystals”, Nanoscale Research Letters 7, 143 (2012).

  26. R. Aluguri, S. Das, R. K. Singha, S. Manna, A. Dhar, and S. K. Ray, “Photoluminescence characteristics of Er doped Ge nanocrystals embedded in alumina matrix”, Optical Materials 34, 1430 (2012).

  27. S Manna, S Das, S. P. Mondal, R. K. Singha and S K Ray, “High Efficiency Si/CdS Radial Nanowire Heterojunction Photodetectors Using Etched Si Nanowire Templates”, Journal of Physical Chemistry C 116, 7126-7133 (2012).

  28. S Manna, N Prtljaga, S Das, N Daldosso, S K Ray and L Pavesi, “Photophysics of resonantly and non-resonantly excited erbium doped Ge nanowires”, Nanotechnology 23, 065702 (2012).

  29. K. Das, S. Das, R. K. Singha, S. K. Ray and A. Raychaudhuri, “Preferential ordering of self-assembled Ge islands on focused ion-beam patterned Si(100)”, Journal of Nanoparticle Research. 14, 725 (2012).

  30. S. Das, R. K. Singha, A. Anopchenko, N. Daldosso, L. Pavesi, A. Dhar, and S. K. Ray, “Electroluminescence and charge storage characteristics of quantum confined germanium nanocrystals”, Journal of Applied Physics 110, 024310 (2011).

  31. Mallar Ray, Nil Ratan Bandyopadhyay, Ujjwal Ghanta, Robert F. Klie, Ashit Kumar Pramanick, Samaresh Das, Samit K. Ray, and Syed Minhaz Hossain, ‘Temperature dependent photoluminescence from porous silicon nanostructures: Quantum confinement and oxide related transitions’, Journal of Applied Physics 110, 094309 (2011).

  32. S. Das, K. Das, R. K. Singha, S. Manna, A. Dhar, S. K. Ray and A. Raychaudhuri, Improved IR photoluminescence characteristics from circularly ordered self-assembled Ge islands”, Nanoscale Research Letters 6:416(2011).

  33. S. K. Ray, S. Das, K. Das, R. K. Singha, S. Manna, A. Dhar, "Structural and Optical Properties of Germaniun Nanostructures on Si (100) and Embedded in High-k Oxides", Nanoscale Research Letters 6:224 (2011).

  34. S. Das, S. Manna, R. K. Singha, A. Anopchenko, N. Daldosso, L. Pavesi, A. Dhar, and S. K. Ray, “Light emission and floating gate memory characteristics of germanium nanocrystals”, Physica status solidi (a) 208, 635 (2011).

  35. S. Das, R. K. Singha, S. Manna, S. Gangopadhyay, A. Dhar and S. K. Ray, “Microstrustural, chemical bonding, stress development and charge storage characteristics of Ge nanocrystals embedded in hafnium oxide”, Journal of Nanoparticle Research (2011), 13:587–595.

  36. S. Das, R. K. Singha, S. Gangopadhyay, A. Dhar and S. K. Ray, “Microstrustural characteristics and phonon structures in luminescence from surface oxidized Ge nanocrystals embedded in HfO2 matrix”, Journal of Applied Physics 108, 053510(2010).

  37. R. K. Singha, S. Manna, S. Das, A Dhar and S K Ray, “Room temperature infrared photoresponse of self assembled Ge/Si(001)quantum dots grown by molecular beam epitaxy”, Applied Physics Letter 96, 233113 (2010).

  38. S. K. Ray, R. K. Singha, S. Das, S. Manna, A. Dhar, “Ge based nanostructures for electronic and photonic devices”, Microelectronics reliability 50, 674 (2010).

  39. R. K. Singha, S. Das, A. Dhar, S. K. Lahiri, and S. K. Ray, “Single Hole Charging at Room Temperature of Ge Quantum Dots Grown on Si(001) by Molecular Beam Epitaxy”, Nanoscience and Nanotechnology Letters 1, 1-5 (2009).

  40. S. K. Ray, R. K. Singha, S. Das, K. Das, A. Dhar, “Properties of self-assembled Ge Islands grown by molecular beam epitaxy”, International J. Nanoechnology 6, 552 (2009).

  41. S Das, R K Singha, K Das, A Dhar, and S K Ray, “Silicon Dioxide Embedded Germanium Nanocrystals Grown Using Molecular Beam Epitaxy for Floating Gate Memory Devices”, Journal of Nanoscience and Nanotechnology 9, 5484 (2008).

  42. R K Singha, S Das, S Majumder, K Das, A Dhar, and S K Ray, “Evolution of strain and composition of Ge islands o Si(001) grown by molecular beam epitaxy during postgrowth annealing”, Journal of Applied Physics 103, 114301 (2008).

  43. R K Singha, S Das, K Das, S Majumder,A Dhar, and S K Ray, “Shape and size distribution of MBE grown self-assembled Ge islands on Si (001) substrates”, J. Nanoscience and Nanotechnology 8, 4101 (2008).

  44. S. P. Mondal, V. S. Reddy, S. Das, A. Dhar and S. K. Ray, “Memory effect in junction-like CdS nanocomposites/ conducting polymer poly [2-ethoxy-5-(2-ethylhexyloxy)-1,4-phenylene-vinylene] heterostructure”, Nanotechnology 19, 215306 (2008).

  45. R. K. Singha, K. Das, S. Das, A. Dhar and S. K. Ray, “Characteristics of Ge nanocrystals grown by RF magnetron sputtering”, Advanced Materials Research 31, 89 (2008).

  46. S. Das, K. Das, R. K. Singha, A. Dhar, and S. K. Ray, “Improved Charge Storage Characteristics of Ge Nanocrystals Embedded In Hafnium Oxide”, Applied Physics Letters91, 233118 (2007).

  47. V S Reddy, S Das, S K Ray and A Dhar, “Studies on conduction mechanisms of pentacene based diodes using impedance spectroscopy”, J. Phys. D: Appl. Phys. 40, 7687 (2007).

Conferences

  1. Veerendra Dhyani and Samaresh Das “Synthesis and Characterization of Ge NWs for Optoelectronics” ICMTech New Delhi, India (01- 04 March 2016) (Oral presentation).

  2. Priyanka Dwivedi, Saakshi Dhanekar, Samaresh Das “Low ppm selective sensing of alcohol by titania deposited nano-porous silicon sensor” Porous Semiconductors - Science and Technology (PSST 2016) at Tarragona, Spain, March 6-11, 2016.

  3. Priyanka Dwivedi, Saakshi Dhanekar, Samaresh Das, D. Sakthi Kumar “Selective ethanol sensing from TiO2 nanostructures decorated porous silicon” (ICMS-2016) held at Jeju, Korea , July 10-13, 2016.

  4. Veerendra Dhyani, Jyoti Sharma , Neeraj Kumar and Samaresh Das “Vertical Silicon Nanowire P-N Junction Color Photodetector for Large Area Nanophotonics”, Conference on Emerging Materials (CEMAT) July 18 - 19, 2016 held at IISc Bangalore

  5. Wasi Uddin and Samaresh Das “Multi Dopant Resonance Conduction in Tri-gate Junctionless MOSFET”, Conference on Emerging Materials (CEMAT) July 18 - 19, 2016 held at IISc Bangalore

  6. Veerendra Dhyani, Sudhir Chandra, Khushal Bapna, and Samaresh Das. “ Ge nanowire metal-semiconductor-metal photodetector for visible to near infrared wavelength” ICMAT 2015 Singapore (28 June 2015 -03 July 2015). (Poster presentation)

  7. Priyanka Dwivedi, Saakshi Dhanekar, Samaresh Das, “Selective acetone electrical detection using functionalized nano-porous silicon” IEEE International Conference (INDICON), New Delhi, 2015, pp. 1-4. doi: 10.1109/INDICON.2015.7443518 (Best Paper Award).

  8. Priyanka Dwivedi, Saakshi Dhanekar, Samaresh Das “Room temperature moisture detection by polymer functionalized nano-porous silicon” (ICANN 2015) at I.I.T Guwahati, 8-11 Dec 2015.

  9. Deepam Dubey, Veerendra Dhyani, Neeraj Kumar and Samaresh Das, “Resistive Switching Device Based on Transition Metal Oxide for Memory Storage Applications”, icann-2015 - IIT Guwahati ( 08 Dec 2015- 11 Dec 2015) (Poster presentation )

  10. Neeraj Kumar, Veerendra Dhyani and Samaresh Das, “Germanium nanocrystals based phodetector for silicon photonics”, IWPSD 2015 IISC Bangalore ( 07 Dec 2015- 10 Dec 2015) (Poster presentation )

  11. A. Andreev, T. Ferrus, S. Das, T-Y. Yang, T. Kodera, S. Ihara, K. Horibe, S. Oda and D. A. Williams, "Charge Manipulations in Si-Based Quantum Dot Qubit Devices with Single Electron Transistors: Theory and Experiment", International Conference on Solid State Devices and Materials (SSDM)-2014, 8-10th September, Tsukuba, Japan.

  12. S. Das, T.-Y. Yang, A. Andreev, T. Ferrus and D. A. Williams, ‘Charge stability of two qubit devices based on geometrically defined two isolated double quantum dots’, Condensed Matter in Paris-2014, 24-29 th August, Universite Paris Descartes, France.

  13. T.-Y. Yang, S. Das, T. Ferrus, A. Andreev, and D. A. Williams, ‘Charge sensing of two isolated double quantum dots’, 2014 Silicon Nanoelectronics workshop (SNW), 08-09th June, Honolulu, HI, USA.

  14. S. Das, T.-Y. Yang, A. Betz, F. Gonzalez-Zalba, T. Ferrus and D. A. Williams, ‘Charge motion in a two isolated silicon double quantum dot structure’, Silicon Quantum Information Processing (SiQIP)-2013, 20 Sept., University of Surrey, UK.

  15. Samaresh Das, Tsung-Yeh Yang, Andreas Betz, Fernando Gonzalez-Zalba, Thierry Ferrus*, and David Williams, “DC characteristics of a two isolated double quantum dot structure in silicon”, International Symposium on the Physics of Semiconductors and Applications (ISPSA)-XVI, B5-O-, July 2-5, 2013, Jeju, Korea.

  16. RT Doria, RD Trevisoli, M de Souza, I Ferain, S Das, MA Pavanello “Low-Frequency Noise of nMOS and pMOS short channel junctionless nanowire transistors”, IEEE International SOI Conference (SOI), 2012, 1-2, 1-4 Oct. 2012, NAPA, CA, USA.

  17. RD Trevisoli, RT Doria, M de Souza, I Ferain, S Das, MA Pavanello, “The role of the incomplete ionization on the operation of Junctionless Nanowire Transistors’’, IEEE International SOI Conference (SOI), 2012, 1-2, 1-4 Oct. 2012, NAPA, CA, USA.

  18. Pedram Razavi, Giorgos Fagas, Isabelle Ferain, Ran Yu, Samaresh Das, ‘Electron transport in germanium junctionless transistors’, Solid-State Device Research Conference (ESSDERC), 326-329, 17-21 Sept. 2012, Bordeaux, France.

  19. Mukta Singh Parihar, Dipankar Ghosh, G Alastair Armstrong, Ran Yu, Pedram Razavi, Samaresh Das, Isabelle Ferain, Abhinav Kranti, ‘Sensitivity analysis of steep subthreshold slope (S-slope) in Junctionless nanotransistors’, 1-4 pages, 12th IEEE Conference on Nanotechnology (IEEE-NANO), 20-23 Aug, 2012, Birmingham, UK.

  20. Pedram Razavi, Isabelle Ferain, Samaresh Das, Ran Yu, Nima Dehdashti Akhavan, and Jean-Pierre Colinge “Intrinsic Gate Delay and Energy-Delay Product in Junctionless Nanowire Transistors”, Proceedings Ultimate Integration on Silicon (ULIS), pp. 125-128, 6-7th March, 2012, Grenoble, France.

  21. Ran Yu, Samaresh Das, Richard Hobbs, Yordon Georgiev, Isabelle Ferain, Pedram Razavi, Nima Dehdashti Akhavan, Cynthia A. Colinge and Jean-Pierre Colinge “Top-down Process of Germanium Nanowires using EBL Exposure of Hydrogen Silsesquioxane Resist”, Proceedings Ultimate Integration on Silicon (ULIS), pp. 145-148, 6-7th March, 2012Grenoble, France.

  22. Ran Yu, Samaresh Das, Isabelle Ferain, Pedram Razavi, Nima Dehdashti Akhavan, Cynthia A. Colinge and Jean-Pierre Colinge “Simulation of Impact Ionization Effect in Short Channel Junctionless Transistors”, Proceedings EUROSOI, pp. 37-38, 23-25 Jan, 2012, La Grande Motte, France.

  23. A.N. Nazarov, V.S. Lysenko, I. Ferain, S. Das, R. Yu, A. Kranti, N. Dehdashti Akhavan, P. Razavi, JP Colinge, “Floating body effects in junctionless MuGFETs”, Proceedings EUROSOI, pp. 93-94 , 23-25 Jan, 2012, La Grande Motte, France.

  24. 1. S. Das, R. K. Singha, A. Dhar and S. K. Ray, “Conductive force microscopy and hole charging in Ge islands grown by RF sputtering”, IEEE INEC, pp. 1-2, 21-24 June, 2011, Tao-Yuan, Taiwan.

  25. S. Das, Santanu Manna, Rajkumar Singha, Oleksiy Anopchenko, Nicola Daldosso, Lorenzo Pavesi, Achintya Dhar, and Samit Kumar Ray, “Light emission and floating gate memory characteristics of germanium quantum dots” E-MRS 2010 Spring Meeting, Strasburg, France, June 7-11, 2010.

  26. S. Das, R. K. Singha, S. Gangopadhyay, A. Dhar & S. K. Ray, “Luminescenec fine structures from Ge nanocrystals embedded in HfO2 matrix” Proc. 1stInternational Workshop on Si based nano-electronics and –photonics (SiNEP), p. 39, Vigo, Spain, September 20 -23, 2009.

  27. S. Das, R. K. Singha, S. Manna, A. Dhar & S. K. Ray, “Photoluminescence and Single-hole Charging in Ge Quantum Dots Grown by MBE” Proc. 15thInternational Workshop on The Physics of Semiconductor Devices (IWPSD), pp. 213, Solid State Physics Laboratory and Jamia Millia Islamia, Delhi, India, December 15-19, 2009.

  28. R. K. Singha, S. Das, S. Manna, A. Dhar, and S. K. Ray, "Infrared Photo current detection using inter subband transitions in MBE grown Ge Quantum dots", pp.150-1512, 15th International workshop on the physics of Semiconductor Devices (IWPSD-2009).

  29. S. Das, R. K. Singha, K. Das, A. Dhar and S. K. Ray, “Silicon dioxide embedded germanium nanocrystals grown using molecular beam epitaxy for memory device applications”, Proc. International Conference on NANO Science & Technology, Chennai, Feb.27-29,2008, C026.

  30. S. P. Mondal, V. S. Reddy, S. Das, A. Dhar and S. K. Ray, “Memory characteristics of CdS nanocomposite/MEH-PPV[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylene-vinylene] heterostructures”, Proc. International Conference on NANO Science & Technology, Chennai, Feb.27-29,2008, B084.

  31. S. Das, R. K. Singha, S. Manna, A. Dhar & S. K. Ray, “Optical Properties of Self-assembled Ge(Si) Quantum Dots Grown on Si(001) by Molecular Beam Epitaxy” AOMD, pp. 206-212, 2008.

  32. R.K. Singha, K. Das, S. Das, A. Dhar & S. K. Ray, “Characteristics of Ge Nanocrystals on Si (100) Grown by RF Magnetron Sputtering”, Symposium-D: Semiconductor Photonics : Nanostructured Materials and Devices, Int. Conf. on Material for Advanced Technologies 2007, Singapore, p. 21, 1-6 July 2007.

  33. S. Das, R. K. Singha, K. Das, A. Dhar and S. K. Ray, “Growth of Strained SiGe Layers and SiGe/Si Multiple Quantum Well Structures using Molecular Beam Epitaxy”, IWPSD, , pp. 208-211, 2007,IIT Bombay.

  34. R. K. Singha, S. Das, K. Das, A. Dhar and S. K. Ray, “Growth of Ge Nanoislands on Si (001) using Molecular Beam Epitaxy”, IWPSD, pp. 205-207, 2007, IIT Bombay.

  35. V. Sivaji Reddy, S.Das, S.K. Ray and A. Dhar, (2007), “Electrical Characteristics of Pentacene Thin Film Junctions”, IWPSD, pp. 190-193, 2007, IIT Bombay.

  36. S. Das, K. Das, R. K. Singha, A. Dhar and S. K. Ray “Electrical & optical Characteristics of Ge Nanocrystrals Embedded in Oxide Matrices for Floating Gate Memory Devices”, , Proc.10thIntl. Conf. on Advanced Material (IUMRS-ICAM), Bangalore, India, V-8, 8-13 Oct, 2007.

  37. R. K. Singha, S. Das, K. Das, A. Dhar and S. K. Ray, “Shspe and Size Distribution of Self-assembled Ge Islands on Si(001) Grown by Molecular Beam Epitaxy”, Proc.of 10thInternational Conference on Advanced Material (IUMRS-ICAM 2007) Bangalore, India, p D-13, 8-13 Oct, 2007.

  38. A. Roy, S. Das, A. Dhar and S. K. Ray, “The effect of buffer layer on electrical properties in Al/SrBi2Ta2O9/HfO2/Si ferroelectric gate oxide structure”, Proc.10thIntl. Conf. on Advanced Material (IUMRS-ICAM), Bangalore, p. V-13, 8-13 Oct, 2007.

  39. R. K. Singha, S. Das, S.Majumdar, K. Das, A. Dhar and S. K. Ray “Shape and size distribution of self-assembled Ge nanocrystals on Si (001) substrates grown by molecular beam epitaxy”, , Proc.of Advanced Nano Materials – ANM 2007, Indian Institute of Technology, Bombay, 8-10 Jan, 2007.

  40. V. Sivaji Reddy, S. Das, Achintya Dhar and Samit Kumar Ray, “Role of annealing environment on the properties of ITO thin films for organic light emitting diodes”, Proc.of 3 rd International Conference on Computers and Devices for Communication (CODEC-2006), Kolkata, p. 296, Dec. 18-20, 2006.

Book Chapter

  1. R. K. Singha, K. Das, S. Das, A. Dhar and S. K. Ray, (2008) “Characteristics of Ge nanocrystals grown by RF magnetron sputtering”, in an Edited book “Semiconductor Photonics: Nanostructured Materials ad Devices” eds. S. J. Chua, J.H.Teng, O.Wada, R. de la Rue and X. H. Tang, Trans Tech Publications ltd., Switzerland, ISBN 0-87849-471-5.

  2. S. Das, R. K. Singha, S. Gangopadhyay, A. Dhar & S. K. Ray, “Luminescenec fine structures from Ge nanocrystals embedded in HfO2 matrix”, in an Edited book ‘1st Intl. Workshop on Si based nano-electronics and –photonics’ eds. S. Chiussi, P. Alpuim, J. Murota, P. Gonzalez, J. Serra, B. Leon, Netbiblo, Spain, ISBN: 978-84-9745-16-2.