Ankur Gupta

Prof. Ankur Gupta
Associate Professor


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  • About
  • Research Interest
  • Contact Details
  • Funded Project
  • Student Project
  • Research Group
  • Journals
  • Conferences
  • Patents

About

Dr. Ankur Gupta obtained his Ph.D. from IIT Bombay in 2015 under the guidance of Prof. Maryam Shojaei Baghini and Prof. V. Ramgopal Rao. His doctoral thesis was titled "High Voltage DeMOS Device Design for Integrated RF Power Amplifier Applications”. He worked as a I/O circuit designer in Texas Instruments Inc., where he was responsible for architecture definition of the I/O, implementation by circuit design at schematic level and characterization. He was a visiting research scholar in Intel Inc., Germany where he worked on RF power amplifier design. He also worked in GlobalFoundries Singapore where he was responsible for RF-CMOS fabrication process integration.

  



Research Interest

1. Analog/RFIC Design

2. AI/ML for VLSI design, modeling, and automation

3. CMOS Circuit Design

4. Electronic System Design

5. Wireless Power Transfer











Contact Details

Email ankurgupta@care.iitd.ac.in
Telephone (O) +91-11-26596069
Facsimile +91-11-26582037
Address #214, First-Floor, Block-3,
Centre for Applied Research in Electronics,
Indian Institute of Technology, Delhi
Hauz Khas, New Delhi - 110 016, INDIA










Sponsored Projects

Total amount of projects undertaken as Principal-Investigator (PI): ₹ 4.0 Cr

Total amount of projects undertaken as Co-Principal-Investigator (CP): ₹ 3.8 Cr

Project Code Project Title Funding Agency Amount Starting Date End Date Role
RP04099G Wireless single contact Electrical Power Transmission on conducting surfaces (DRDO-IITD JATC) Department of Defence Research & Development ₹ 2,92,94,000 30-03-2021 29-03-2024 PI
RP03607G Gallium-Nitride (GaN) based High-Voltage RF Devices for Defence/Space Applications Science and Engineering Research Board (SERB) ₹ 54,95,540 15-09-2018 14-09-2021 PI
MI02190G GaN Power Amplifier MMIC design for High Bands (24GHz - 40GHz) 5G Applications IRD, IIT Delhi ₹ 5,00,000 04-01-2020 31-07-2021 PI
MI02059G Equipment Matching Grant from IRD to Prof. Ankur Gupta, Centre for Applied Research in Electronics IRD, IIT Delhi ₹ 29,99,950 11-12-2019 30-11-2020 PI
MI01893G The 3rd PAC Meeting -Electrical, Electronics and Computer Engineering during 21.02.2019 to 22.02.2019 at IIT Delhi Science and Engineering Research Board (SERB) ₹ 8,70,000 19-02-2019 18-08-2019 PI
MI01419 Sensor Interface Circuit and System Design (FIRP) IRD, IIT Delhi ₹ 10,00,000 15-12-2016 31-12-2018 PI
MI01326 New Faculty Grant to Dr. Ankur Gupta for Procurement of Equipments (under RGNF scheme of IRD) IRD, IIT Delhi ₹ 1,00,000 08-05-2016 02-04-2018 PI
Total Amount ₹ 4,02,59,490
RP04145G Development of THz Modulator based on 2D Transition Metal Chalcogenides Science and Engineering Research Board (SERB) ₹ 68,85,615 07-12-2021 07-11-2024 CP
RP03495G Improvement of S&T Infrastructure in Centre for Applied Research in Electronics, IIT Delhi (FIST) Department of Science & Technology ₹ 1,58,00,000 02-05-2018 02-04-2023 CP
MI01718G To Conduct SERB 14th PAC Meeting of Electrical, Electronics & Computer Engineering during 08.02.2018 to 09.02.2018 at IIT Delhi Science and Engineering Research Board (SERB) ₹ 12,94,000 02-05-2018 04-04-2018 CP
MI01876G TO Conduct the 2nd Meeting of PAC - Electrical, Electronics and Computer Engineering at IIT Delhi during 31.01.2019 to 01.02.2019 Science and Engineering Research Board (SERB) ₹ 13,42,000 25-01-2019 24-07-2019 CP
RP03680G Sub-5V Metal Based MEMS Switches for Radar Beam Steering Antenna under Harsh Environments (IMPRINT - 2) Science and Engineering Research Board (SERB) ₹ 1,24,30,560 03-08-2019 03-07-2022 CP
Total Amount ₹ 3,77,52,175

M.Tech Projects

Completed

  • Deepak Sharma, Microcontroller based circuit design for sensing/security applications
  • Radhika More, TCAD Analysis of CPW
  • Vandana Pushpad, INAS BASED NANOWIRE TUNNEL FET
  • Rutwik Joshi, RF PERFORMANCE IMPROVEMENT OF INTEGRATED CPW
  • Harsh Bhatt, Design of RF Switch in SOI process for 5G Application
  • Manu Singh, GaN Device Design and Modeling using TCAD
  • Divyansh Manohar, Transceiver Design for Wireless Surface Power Transfer
  • Rishabh Singh, Highly Stable Relaxation Oscillator Circuit for Ultra low-power Applications

Ongoing

  • Jatin Yadav, Design and Simulation of Junction-less Nanowire MOSFETs
  • Yash Prajapati, Relaxation Oscillator circuit design
  • Meenu Methaliya, Modeling of spintronic devices for bio-inspired computing
  • Mridul Sahai, Silicon-on-insulator RF Switch design in ADS



Ongoing PhD Scholars

Santosh Parajuli
Research Area:  Wireless Power Transfer
Supervisor : Prof. Ankur Gupta
Researchgate : https://www.researchgate.net/ profile/Santosh-Parajuli

Shivansh Awasthi
Research Area:   HEMT Device Design and Fabrication
Supervisor : Prof. Ankur Gupta
Researchgate : https://www.researchgate.net/ profile/Shivansh_Awasthi4

Anant Johari
Research Area:  GaN HEMT Device Design
Supervisor : Prof. Rajendra Singh & Prof. Ankur Gupta
Researchgate : https://www.researchgate.net/ profile/Anant-Johari-3

Vikas Kumar
Research Area:   Wireless Power Transfer and Energy Harvesting
Supervisor : Prof. Ankur Gupta

Name: Swapnil Lakhan Tembhare (ME)
Research Area: MOS Device Design for Improved Reliability and Switching Performance
Supervisor : Prof. Ankur Gupta

Name: Vikash Sharma (ME)
Research Area: Junctionless Nanowire-based Photodetectors
Supervisor : Prof. Samaresh Das and Prof. Ankur Gupta



Alumni PhD Scholars

Nitish Kumar
Research Area  : Junctionless Nanowire/Nanosheet Transistors
Supervisor :Prof. Pushpapraj Singh & Prof. Ankur Gupta
Linkedin: https://in.linkedin.com/ in/nitish-kumar-b9617211b
Researchgate : https://www.researchgate.net/ profile/Nitish-Kumar-39
Visiting Research Fellow: IMEC and KU Leuven (September 2023 to July 2024) and Macquarie University Sydney (May to June 2023) (AIRS Fellowship)

Aakanksha Mishra
Research Area:   High Voltage Device Design For RF Applications
Supervisor : Prof. Ankur Gupta
Researchgate : https://www.researchgate.net/ profile/Aakanksha-Mishra-6

Sonam Jain
Research Area:  Organic FET device design and fabrication for radiation detection
Supervisor : Prof. V. Ramgopal Rao & Prof. Ankur Gupta
Researchgate  : https://www.researchgate.net/ profile/Sonam-Jain-8

Pragyey Kaushik
Research Area:  Modeling and Simulation of Bias Dependent Behavior in GaN HEMT for RF Applications
Supervisor : Prof. Ankur Gupta & Prof. Ananjan Basu
Researchgate : https://www.researchgate.net/ profile/Pragyey-Kaushik

Shraddha Pali
Research Area:   Device Design for Sensor and Interface Circuit Design
Supervisor : Prof. Ankur Gupta
Researchgate : https://www.researchgate.net/ profile/Shraddha-Pali

Shradha Gupta
Research Area:   GaN HEMT Device Reliability
Supervisor : Prof. Ankur Gupta
Researchgate : https://www.researchgate.net/ profile/Shradha-Gupta-10

Journals

    2026

  • S. Parajuli, V. Kumar, T. Thundat and A. Gupta, "Single-Contact Excitation and Power Extraction from Metallic Surface Using Synchronized Resonators," in IEEE Journal of Emerging and Selected Topics in Industrial Electronics,DOI: 10.1109/JESTIE.2026.3658343

    • 2025

  • Parajuli, S., Kumar, V., Ranade, G., Thundat, T., & Gupta, A. (2025). Single-Contact Electrical Power Transmission on the Conductive Surface Using H-Bridge Inverter. IETE Technical Review, 1–12,DOI: 10.1080/02564602.2025.2510959
  • Anant Johari, Ankur Gupta, Tian-Li Wu, Rajendra Singh, "Investigation of DC and Low-Frequency Noise Performance in GaN-on-Si Power MIS-HEMTs Over a Temperature Range of 4 K–420 K," IEEE Journal of the Electron Devices Society, vol. 13, pp. 870–875, 2025. DOI: 10.1109/jeds.2025.3530767
  • Anant Johari, Chin-Ya Su, Der-Sheng Chao, Ankur Gupta, Rajendra Singh, Tian-Li Wu, "Effect of Gamma Radiation on Static DC, Reliability, and RF Performance of Submicron GaN-on-Si RF MIS-HEMTs With In Situ SiN," IEEE Transactions on Device and Materials Reliability, vol. 25, pp. 465–472, 2025. DOI: 10.1109/tdmr.2025.3573183
  • Shivansh Awasthi, Heng-Tung Hsu, Yi-Fan Tsao, Ping-Hsun Chiu, Vikas Kumar, Ankur Gupta, "Large-Signal Performance of 0.1-μm AlGaN/GaN HEMT on SiC Under EHF Stress for V-Band," IEEE Microwave and Wireless Technology Letters, vol. 35, pp. 1803–1806, 2025. DOI: 10.1109/lmwt.2025.3595974

    • 2024

  • S. Awasthi, H.-T. Hsu, Y.-F. Tsao, P.-H. Chiu, and A. Gupta, “A computational approach to optimize the linearity in dual-gate InAlGaN/AlN/GaN HEMTs,” Semiconductor Science and Technology, vol. 39, no. 12, p. 125009, Nov. 2024, doi: 10.1088/1361-6641/ad8eed.

  • V. Kumar et al., "Wireless Powered Passive Resonant Based Omnidirectional Sensing System in Human Cooperative Robots," IEEE Sensors Letters, doi: 10.1109/LSENS.2024.3511348.

  • Nitish Kumar, Shraddha Pali, Ankur Gupta and Pushpapraj Singh, "Self-Heating Mapping of the Experimental Device and Its Optimization in Advance Sub-5 nm Node Junctionless Multi-Nanowire FETs," in IEEE Transactions on Device and Materials Reliability, vol. 24, no. 1, pp. 33-40, March 2024, doi: 10.1109/TDMR.2023.3340032.

  • Nitish Kumar, Aakanksha Mishra, Ankur Gupta, Pushpapraj Singh, “Modeling of inner-outer gates and temperature dependent gate-induced drain leakage current of junctionless double-gate-all-around FET”,Microelectronics Journal, vol. 146, pp. 106155, April 2024, doi: 10.1016/j.mejo.2024.106155.

  • Nitish Kumar, Khanjan Joshi, Ankur Gupta, Pushpapraj Singh, “Piezoresistive sensitivity enhancement below threshold voltage in sub-5 nm node using junctionless multi-nanosheet FETs”, Nanotechnology, vol. 35, no. 33, pp. 335501, May 2024, doi: 10.1088/1361-6528/ad4cf1.

  • Nitish Kumar, Ankur Gupta, Pushpapraj Singh, "Leakage Current and Hot-Carrier Injection in the Junctionless Nanowire FETs Enhanced by Tensile Mechanical Stress," in IEEE Transactions on Electron Devices, vol. 71, no. 7, pp. 4420-4423, July 2024, doi: 10.1109/TED.2024.3405474.

    • 2023

  • Waqas Ahmed Khan Afridi, Nitish Kumar, Krishanthi Jayasundera, Ankur Gupta, Pushpapraj Singh, Boby George, and Subhas Chandra Mukhopadhyay "Design an Electromagnetic Sensor to Measure the Organic Carbon in Soil and Its Validation With Standard Walkley–Black Method," in IEEE Sensors Letters, vol. 7, no. 12, pp. 1-4, Dec. 2023, Art no. 1501804, doi: 10.1109/LSENS.2023.3328591.

  • Nitish Kumar, Ankur Gupta, Pushpapraj Singh and Subhas Chandra Mukhopadhyay, "Tunable Piezoresistive NEMS Pressure Sensor Simulation Under Various Environmental Conditions," IEEE Sensors Letters, vol. 7, no. 8, pp. 1-4, Aug. 2023, DOI: 10.1109/LSENS.2023.3300812.

  • Shraddha Pali, Nitish Kumar, and Ankur Gupta, “P-type trench gate-based drain-extended N-type MOS design for high unclamped inductive switching reliability,” Microelectronics Journal, vol. 139, pp. 105894, Sep. 2023, DOI: 10.1016/j.mejo.2023.105894.

  • Nitish Kumar, Sushil Kumar, Pragyey Kumar Kaushik, Ankur Gupta, and Pushpapraj Singh, “Electro-Thermal Characteristics of Junctionless Nanowire Gate-All-Around Transistors Using Compact Thermal Conductivity Model”, IEEE Transactions on Electron Devices, vol. 70, no. 6, pp. 2934 – 2940, May 2023, DOI: 10.1109/TED.2023.3268249.

  • Shraddha Pali, Nitish Kumar, and Ankur Gupta, "Drain extended MOS Body Region Engineering for Switching Reliability under Unclamped Inductive Load Conditions", IEEE Transactions on Device and Materials Reliability, Jan. 2023, DOI: 10.1109/TDMR.2023.3237467.

2022

  • Nitish Kumar, Pragyey Kumar Kaushik, Sushil Kumar, Ankur Gupta and Pushpapraj Singh, "Thermal Conductivity Model to Analyze the Thermal Implications in Nanowire FETs", IEEE Transactions on Electron Devices, Sep. 2022, DOI: 10.1109/TED.2022.3208848.

  • Shraddha Pali and Ankur Gupta, “High-k field plate DeNMOS design for enhanced performance and electrothermal SOA in switching applications,” Microelectronics Journal, vol. 130, p. 105615, Dec. 2022, doi: 10.1016/j.mejo.2022.105615.

  • Shraddha Pali and Ankur Gupta, "Physical Insights on Current Dynamics of RESURF DeMOS Designed for High-Frequency CMOS Level Shifter Application", IETE Technical Review, Nov. 2022, doi: 10.1080/02564602.2022.2143915.

  • Shraddha Pali, Pragyey Kumar Kaushik, and Ankur Gupta, "Drain-extended MOS design using High-k dielectric to control off-state BTBT with enhanced switching performance", Engineering Research Express, vol. 4, no. 3, pp. 035011, July 2022, DOI: 10.1088/2631-8695/ac8147.

  • Pragyey Kumar Kaushik, Shivansh Awasthi, Nitish Kumar, Umakant Goyal, Meena Mishra, Ankur Gupta and Ananjan Basu, "Simulation-based study of current gain peaks h21 at low gate bias in AlGaN/GaN HEMTs", Engineering Research Express, vol. 4, pp. 025042, June 2022, DOI: 10.1088/2631-8695/ac743b.

  • Shradha Gupta, Janesh K. Kaushik and Ankur Gupta, "On the Onset of Breakdown of the Virtual Gate in AlGaN/GaN HEMTs", IEEE Transactions on Electron Devices, May 2022, DOI: 10.1109/TED.2022.3172234.

  • Nitish Kumar, Pragyey Kumar Kaushik, Ankur Gupta and Pushpapraj Singh, "Impact of ambient temperature and thermal resistance on device performance of junctionless silicon-nanotube FET", Nanotechnology, May 2022, DOI: 10.1088/1361-6528/ac6df6.

  • Aakanksha Mishra, Mayank Shrivastava and Ankur Gupta, “The Root Cause Behind a Peculiar Dual-Mode ON-State Breakdown in High Voltage LDMOS”, IEEE Transactions on Electron Devices, vol. 69, no. 4, pp. 1906-1911,Feb. 2022, DOI: 10.1109/TED.2022.3149236.

2021

  • Pragyey K. Kaushik, Sankalp. K. Singh, Ankur Gupta and Ananjan Basu, "Small-Signal Analysis of Channel Resistance RL at Low Gate Bias Voltages in AlGaN/GaN HEMTs," in IEEE Transactions on Electron Devices, vol. 68, no. 12, pp. 6033-6038, Dec. 2021, DOI: 10.1109/TED.2021.3116533.

  • Pragyey K. Kaushik, Sankalp K. Singh, Ankur Gupta, Ananjan Basu, Edward Yi Chang, “Impact of Surface States and Aluminum Mole Fraction on Surface Potential and 2DEG in AlGaN/GaN HEMTs”. Nanoscale Research Letter, 16, 159, Oct. 2021, https://doi.org/10.1186/s11671-021-03615-x
  • Aakansha Mishra and Ankur Gupta, "Investigating the Correlation between Space Charge Modulation and ON-State Breakdown in Multiple RESURF DeMOS Devices", IEEE Access, vol. 10, pp. 10731-10739, DOI: 10.1109/ACCESS.2021.3133273.

  • Shraddha Pali and Ankur Gupta, "Design of Drain-Extended MOS Devices Using RESURF Techniques for High Switching Performance and Avalanche Reliability", IEEE Access, vol. 9, pp. 155370-155379, Nov. 2021, DOI: 10.1109/ACCESS.2021.3128059.

  • Pragyey K. Kaushik, Sankalp K. Singh, Ankur Gupta and Ananjan Basu, “An improved parasitic resistance extraction strategy alongside the effect of Cds at low gate bias voltages for AlGaN/GaN HEMTs”, Engineering Research Express, vol. 3, pp. 015009, Jan. 2021,, DOI: 10.1088/2631-8695/abd3e6.

2020

  • Sankalp Kumar Singh, Pragyey Kumar Kaushik, Ramesh Kumar Kakkerla, Ankur Gupta, Deepak Anandan, Venkatesan Nagarajan, Hung Wei Yu and Edward Yi Chang, “Small signal model and RF performance analysis of InAs/GaSb hetero-junction tunneling field effect transistor”, Engineering Research Express, vol. 2, pp. 035004, July 2020, DOI: 10.1088/2631-8695/aba169.

  • Shradha Gupta, J K Kaushik, Ankur Gupta, Vikram Kumar and V R Balakrishnan, “Two-dimensional analytical modelling of drain current collapse in AlGaN/GaN HEMTs using multi-phonon ionisation by an electric field”, Semiconductor Science Technology, vol. 35, pp. 085035, July 2020, DOI: 10.1088/1361-6641/ab8e62.

2019

  • Sonam Jain, Ashwini Gajarushi, Ankur Gupta, V. Ramgopal Rao, "A Passive Gamma Radiation Dosimeter using Graphene Field Effect Transistor", IEEE Sensors, vol. 20, issue 6, pp.2938-2944, Dec. 2019, DOI: 10.1109/JSEN.2019.2958143.

  • Sonam Jain, Sandeep G. Surya, Praveen Kumar, Ankur Gupta, V. Ramgopal Rao, "Sensitivity Improvement of Medical Dosimeters using solution processed TIPS-Pentacene FETs", IEEE Sensors, vol. 19, no. 12, pp. 4428-4434, June 2019, DOI: 10.1109/JSEN.2019.2901810.

  • Sankalp Kumar Singh, Ramesh Kumar Kakkerla, H B Joseph, Ankur Gupta, Deepak Anandan, Venkatesan Nagarajan, Hung Wei Yu, J D Thiruvadigal and Edward Yi Chang, “Optimization of InAs/GaSb core–shell nanowire structure for improved TFET performance”, Materials Science in Semiconductor Processing, vol. 101, pp. 247–52, Oct. 2019, DOI: 10.1016/j.mssp.2019.06.004.

2017

  • Sankalp Kumar Singh, Ankur Gupta, Hung Wei Yu, Venkatesan Nagarajan, Deepak Anandan, Ramesh Kumar Kakkerla and Edward Yi Chang, “Impact of material properties and device architecture on the device performance for a gate all around nanowire tunneling FET”, Material Research Express, vol. 4, pp. 114002, Nov. 2017, DOI: 10.1088/2053-1591/aa95f9.

2016 and before

  • Ankur Gupta, Mayank Shrivastava, Maryam Shojaei Baghini, Dinesh Kumar Sharma, Harald Gossner and V. Ramgopal Rao, “On the Improved High-Frequency Linearity of Drain Extended MOS Devices”, IEEE Microwave and Wireless Components Letters, vol. 26, no. 12, Dec, 2016, DOI: 10.1109/LMWC.2016.2623239.

  • Ankur Gupta, Mayank Shrivastava, Maryam Shojaei Baghini, Dinesh Kumar Sharma, Harald Gossner and V. Ramgopal Rao, “Part I: High Voltage MOS Device Design for Improved Static and RF Performance”, IEEE Transactions on Electron Devices, vol. 62, no. 10, pp. 3168-3175, Sept. 2015, DOI: 10.1109/TED.2015.2470117.

  • Ankur Gupta, Mayank Shrivastava, Maryam Shojaei Baghini, A. N. Chandorkar, Harald Gossner and V. Ramgopal Rao, “Part II: A Fully Integrated RF PA in 28nm CMOS with Device Design for Optimized Performance and ESD Robustness”, IEEE Transactions on Electron Devices, vol. 62, no. 10, pp. 3176-3183, Oct. 2015, DOI: 10.1109/TED.2015.2470109.

Conferences

  1. S. Parajuli, V. Kumar, G. Ranade, T. Thundat and A. Gupta, "Single Wire Resonant Power Transfer in Varying Metallic Environments," 2024 3rd International Conference on Power Systems and Electrical Technology (PSET), Tokyo, Japan, 2024, pp. 446-450 doi: 10.1109/PSET62496.2024.10808905

  2. S. Parajuli, V. Kumar, G. Ranade, T. Thundat and A. Gupta, "A Model for Power Transfer in a Single-Wire System Integrated with a Conductive Surface," 2024 IEEE 21st India Council International Conference (INDICON), Kharagpur, India, 2024, pp. 1-6, doi: 10.1109/INDICON63790.2024.10958492

  3. Nitish Kumar, Karan Gupta, Ayush Gupta, Ankur Gupta, Pushpapraj Singh, “Impact of Back End of Line (BEOL) and Ambient Temperature on Self-Heating in Twin Nanowire Gate-All-Around FETs: Junctionless Mode Versus Inversion Mode," 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), Bangalore, India, 2024, pp. 1-3, doi: 10.1109/EDTM58488.2024.10511833.

  4. Nitish Kumar, Venkateswarlu Sankatali, Yukai Chen, Moritz Brunion, Subrat Mishra, Ankur Gupta, Pushpapraj Singh, Francky Catthoor, James Myers, Julien Ryckaert, Dwaipayan Biswas, Thermal Analysis of High-Performance Server SoCs from FinFET to Nanosheet Technologies," 2024 IEEE International Reliability Physics Symposium (IRPS), Grapevine, TX, USA, 2024, pp. 8B.4-1-8B.4-8, doi: 10.1109/IRPS48228.2024.10529472.

  5. Vikas Kumar, Santosh Parajuli, Shivansh Awasthi, Gayatri Ranade, Kartik Tyagi, Saheli Roy Chowdhury, Rahul Jaiswal, Thomas George Thundat, Ankur Gupta, “Passive RF Resonant Receiver with Voltage Gain for Wireless Power Transfer System," 2023 IEEE Asia Pacific Conference on Circuits and Systems (APCCAS), Hyderabad, India, 2023, pp. 70-74, doi: 10.1109/APCCAS60141.2023.00027.

  6. Santosh Parajuli, Rahul Jaiswal, Vikas Kumar, Kartik Tyagi, Gayatri Ranade, Thomas Thundat, Ankur Gupta, "Single Contact Wireless Power Transfer through the Conductive Surface Without Grounding," 2023 IEEE IAS Global Conference on Emerging Technologies (GlobConET), London, United Kingdom, 2023, pp. 1-4, DOI: 10.1109/GlobConET56651.2023.10149992.

  7. Nitish Kumar, Kanyakumari Ashok Bhinge, Ankur Gupta, and Pushpapraj Singh, "Electro-Thermal Properties and Self-Heating Effect in Multi-Nanosheet FETs: Junctionless Mode Versus Inversion Mode," 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), Seoul, Korea, Republic of, 2023, pp. 1-3, DOI: 10.1109/EDTM55494.2023.10103095.

  8. S. Awasthi, V. Kumar, P. K. Shrivastava, P. Kumar Kaushik and A. Gupta, "DC, RF and Noise Characterization of AlGaN/GaN HEMT," 2023 2nd Edition of IEEE Delhi Section Flagship Conference (DELCON), Rajpura, India, 2023, pp. 1-3, DOI: 10.1109/DELCON57910.2023.10127539.

  9. Nitish Kumar, Kanyakumari Ashok Bhinge, Sushil Kumar, Samaresh Das, Ankur Gupta, and Pushpapraj Singh, "Self-Heating Effect in Sub-5nm Node Junctionless Multi-Nanosheet FET," 2022 IEEE International Conference on Emerging Electronics (ICEE), Bangalore, India, 2022, pp. 1-4, DOI: 10.1109/ICEE56203.2022.10117830.

  10. S. Awasthi, P. K. Kaushik, V. Kumar and A. Gupta, "Comparative Analysis of TCAD augmented ML Algorithms in modeling of AlGaN/GaN HEMTs," 2023 2nd Edition of IEEE Delhi Section Flagship Conference (DELCON), Rajpura, India, 2023, pp. 1-5, doi: 10.1109/DELCON57910.2023.10127296.

  11. A. Mishra, B. S. Kumar, M. Monishmurali, Sheikh. A. Suzaad, Shubham Kumar, Kiran P. Sanjay, Amit K. Singh, Ankur Gupta and Mayank Shrivastava, “Extremely Large Breakdown to Snapback Voltage Offset (Vt1>>VBD): Another Way to Improve ESD Resilience of LDMOS Devices”, Accepted in 2023 International Reliability Physics Symposium (IRPS), Monterey, California, USA, 2023.

  12. Aakanksha Mishra, B. S. Kumar, Avinash K. Singh, Shubhank Gupta, M. Monishmurali, Amit K. Singh, Ankur Gupta and Mayank Shrivastava, “Inverted SOA and Transient Non-Linearity of LDMOS Devices with RESURF-implant”, in Proceedings of 6th International Conference on Emerging Electronics (ICEE), 2022.

  13. Nitish Kumar, Pragyey kumar Kaushik, Ankur Gupta and Pushpapraj Singh, “Self-Heating Effects (SHEs) in Gate-All-Around FETs With Horizontally Stacked Multiple Junctionless Nanowires", 2022 IEEE Delhi Section Conference (DELCON), DOI: 10.1109/DELCON54057.2022.9753115

  14. Nitish Kumar, Pragyey kumar Kaushik, Ankur Gupta and Pushpapraj Singh, “Effect of Temperature on Dynamic Parameters of Junctionless Multiple Nanowire Field-Effect Transistors" 2022 IEEE Delhi Section Conference (DELCON), DOI: 10.1109/DELCON54057.2022.9752961

  15. Nitish Kumar, Ankur Gupta and Pushpapraj Singh, "Breakdown-Voltage Enhancing in LDMOS by Introducing Buffered Step Doping Technique", IEEE ICEEICT, 16-18 Feb. 2022, Trichy, India. DOI: 10.1109/ICEEICT53079.2022.9768467.

  16. Aakansha Mishra, Ankur Gupta, “Quasi-Saturation Versus Non-Linear Capacitance Behavior in High Voltage Demos Devices” in 2021 IWPSD. IIT Delhi.

  17. Shraddha Pali, Ankur Gupta, “Gate Charge Optimization of Drain Extended Mos Devices for High Voltage High-Frequency CMOS Level Shifter Design” in 2021 IWPSD, IIT Delhi.

  18. Aakansha Mishra, B. S. Kumar, J. Somayaji, M. Shrivastava, and Ankur Gupta, "Impact of Space Charge Modulation on Superjunction-LDMOS," in 2020 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), 2020, vol. 2, pp. 68-69.

  19. Aakansha Mishra, B. S. Kumar, J.Somayaji, and Ankur Gupta, "Geometrically Dependent Space Charge Modulation and Quasi-saturation Effect in Superjunction-LDMOS Device," in 5th IEEE International Conference on Emerging Electronics (ICEE), 2020.

  20. Pragyey Kumar Kaushik, Gufran Ahmed, Ankur Gupta, Ananjan Basu, “Impact of Surface Trap States on 2-DEG and Barrier Layer Conduction Band in AlGaN/GaN HEMT” in 5th IEEE International Conference on Emerging Electronics (ICEE), 2020.

  21. Shraddha Pali, Ankur Gupta, "Optimization of Drain Extended MOS Devices for Reliability in High Switching Applications," in 5th IEEE International Conference on Emerging Electronics (ICEE), 2020.

  22. Shradha Gupta, Janesh K. Kaushik, and Ankur Gupta. "On-state Leakage Current Modeling in AlGaN/GaN HEMT." in 5th IEEE International Conference on Emerging Electronics (ICEE). IEEE, 2020.

  23. Pragyey Kumar Kaushik, Sankalp kumar Singh, Ankur Gupta, Ananjan Basu, “An effect of source/drain spacing in AlGaN/GaN HEMT on linearity to improve device reliability” in 5th IEEE International Conference on Emerging Electronics (ICEE), 2020.

  24. Pragyey Kumar Kaushik, S. Kumar Singh, Ankur Gupta, A. Basu and E. Y. Chang, "Resistive Approach for Extraction of Bias-Dependent Parasitic Resistance, Mobility and Virtual Gate Length in GaN HEMT," 2020 IEEE Silicon Nanoelectronics Workshop (SNW), 2020, pp. 117-118, doi: 10.1109/SNW50361.2020.9131661.

  25. Sonam Jain, Ashwini Gajarushi, Ankur Gupta, V. Ramgopal Rao, "Effect of Gamma Irradiation on Mono-layer and Bi-layer Graphene", 10th International Conference on Materials for Advanced Technologies, Singapore, 23-28 June 2019.

  26. Shraddha Gupta, J. K. Kaushik, Ankur Gupta and V. R. Balakrishnan, "Two Dimensional Analytical Modelling of DC IV Collapse of Drain Current in AlGaN/GaN HEMTs," 2019 IEEE International Conference on Electrical, Computer and Communication Technologies (ICECCT), 2019, pp. 1-5, doi: 10.1109/ICECCT.2019.8869264.

  27. Sonam Jain, Vinit Shinde, Ashwini Gajarushi, Ankur Gupta, V. Ramgopal Rao, "Application of Mono Layered Graphene Field Effect Transistors for Gamma Radiation Detection", Proceedings of the IEEE 13th Nanomaterial and device conference, Portland, Oregon, USA, 14-17th October, 2018.

  28. Sankalp K Singh, Ankur Gupta, Venkateshan Nagarajan, Deepak Anandan, Ramesh K Kakkerla, W Yu Hung, Edward Y Chang, “Study of Interface Trap Charges in InAs Nanowire Tunnel FET,” in 2017 IWPSD, pp. 1165-1170, doi: 10.1007/978-3-319-97604-4_178

  29. Ankur Gupta, Mayank Shrivastava, Maryam Shojaei Baghini, Dinesh Kumar Sharma, A.N. Chandorkar, Harald Gossner and V. Ramgopal Rao, “Drain extended MOS device design for integrated RF PA in 28nm CMOS with optimized FoM and ESD robustness”, International Electron Device Meeting (IEDM) 2014.

  30. Ankur Gupta, Mayank Shrivastava, Maryam Shojaei Baghini, Harald Gossner and V. Ramgopal Rao, “A Fully-Integrated Radio-Frequency Power Amplifier in 28nm CMOS Technology mounted in BGA Package,” International Conference on VLSI Design, 2016.

  31. Ankur Gupta, Rajat Chauhan, Vinod Menezes, Vikas Narang and H.M. Roopashree, “A Robust Level Shifter Design for Adaptive Voltage Scaling,” IEEE International Conference on VLSI Design, 2008, pp. 383-388.

  1. Input Output I/O circuit supporting multiple I/O logic level swings. U. S. patent, granted.

  2. Band-Gap Reference Voltage Generator With a Fast Startup Circuit, Indian Patent Filed 2023.

  3. Drain Extended NMOS (DeNMOS) and a Method Thereof To Optimize Parasitic BJT Trigger Voltage and Self-Heating Induced Thermal Runaway, Indian Patent Filed 2022.