Samaresh

Prof. Samaresh Das
Associate Professor


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About

Dr. Samaresh Das is Associate Professor at the Centre for Applied Research in Electronics(CARE), IIT Delhi, India. He received the M. Sc. and PhD degree from Indian Institute of Technology Kharagpur, India, in 2005 and 2011, respectively. At Indian Institute of Technology, his research involved on Ge quantum dot based floating gates, light emitters and photo-detectors on silicon substrate. He then worked as a researcher in the Ultimate Silicon Device Group led by Prof. Jean-Pierre Colinge at Tyndall National Institute, Ireland. There he worked on the fabrication and characterization of Junctionless Nanowire Trigate MOSFET. He worked as a Research Scientist at Hitachi Cambridge Lab-Cavendish Lab, University of Cambridge on Quantum Information Project for the development of scalable silicon charge qubit. In September 2014, he joined Centre for Applied Research in Electronics, Indian Institute of Technology Delhi as an Assistant Professor. His research group IIT Delhi is working on the development of efficient infrared photodetectors, THz electronic devices, quantum information technology and on electronic bio-sensors.He is a recipient of Faculty Research Award (2019, IIT Delhi), Institute for Smart Structures and Systems (ISSS) Young Scientist Award-2019, Indian National Academy of Engineering (INAE) Young Engineer Award-2017, and MeitY Visvesvaraya Young Faculty Research Fellowship Award.

Courses mostly offered

  1. CRL : 722 (RF AND MICROWAVE SOLID STATE DEVICES)

  2. CRL : 725 (TECHNOLOGY OF RF AND MICROWAVE SOLID STATE DEVICES)

  3. CRL : 727 (INTRODUCTION TO QUANTUM ELECTRON DEVICES)

  4. CRP : 723 (FABRICATION TECHNIQUES FOR RF & MICROWAVE DEVICES)


Research Interest

UV-Visible Photodetectors

Applied Physics Letters 108 (6), 063113  Applied Physics Letters 113, 101101

Infrared Solid State Photodetectors

Applied Physics Letters 114, 121101 ,   Scientific Reports 7, 4423 ,   

Appl. Phys. Lett. 111, 191107

                

THz Electronics (Detectors and Modulators)

https://onlinelibrary.wiley.com/doi/abs/10.1002/adom.201901714  

                             

Quantum Electronics

Journal of Physics D: Appl Phys. 50, 365104

Semiconductor Science and Technology

                                  

Contact Details

Email samareshdas@care.iitd.ac.in
Telephone (O) +91-11-26596036
Facsimile +91-11-26591103, 26596219
Address Centre for Applied Research in Electronics,
Indian Institute of Technology, Delhi
Hauz Khas, New Delhi - 110 016, INDIA










Sponsored Projects

    Ongoing:

  1. Development of Quantum Computing Architecture with Silicon-based Spin Qubits, ERIP, PI: Prof. Samaresh Das, 17-03-2020 to 16-03-2025, 31.12 Lakh

  2. High Efficiency THz detectors Based on Field Effect Transistors (JATC Sub Project # 14 under MI01618), DRDO, PI: Prof. Samaresh Das, Co-PI :Prof. Mahesh P Abegaonkar, 10-10-2017 to 10-09-2021 , 567 Lakh

  3. Ultra-high efficiency CMOS compatible Si/Ge Single Nanowire Photodetectors in Infrared and THz Wavelengths for Defence and Security Applications (IITD & IIT Kharagpur(Lead)), IMPRINT, MHRD, PI: Prof. Samaresh Das, Co-PI: Prof. Ananjan Basu, 24-08-2017 to 23-08-2020, 132 Lakh

  4. MBE growth of 2D materials and van der Waals heterostructures for applications in sensors and optolelectronic devices (Under Grand Challenge No 3)", MHRD, MHRD, PI: Prof. Rajendra Singh, Co-PI: Prof. Samaresh Das, 07-08-2018 to  06-08-2023, 750 Lkah

  5. Improvement of S&T Infrastructure in Centre for Applied Research in Electronics,DST, FIST, PI: Prof. Ananjan Basu, Co-PI: Prof. Samaresh Das, Prof. Ankur Gupta, Prof. Pushpapraj Singh, 05-02-2018 to  04-02-2023, 158 Lakh

  6. Development of Web Enabled Learning/Training Modules for Nano-Materials, Fabrication and Devices, IMPRINT, MHRD, PI: Prof. Neeraj Khare, Co-PI: Prof. Suddhasatwa Basu, Prof.Sudarsan Ghosh, Prof. Samaresh Das, Prof. J P Singh, Prof. Rajendra Singh, Prof. Bhaskar Mitra, Prof. V K Komorala, 31-07-2017 to 30-07-2020, 60 Lakh

  7. Dynamic spin injection and spin-orbit torques in 2d-transition metal dichalcogenides /ferromagnet heterostructures, SERB, DST, PI: ‪Prof. Pranaba Kishor Muduli‬ Co-PI: Prof. Samaresh Das, 20-03-2019 to 19-03-2022, 32 Lakh

  8. Sub-5V Metal Based MEMS Switches for Radar Beam Steering Antenna under Harsh Environments (IMPRINT - 2), SERB, DST, PI: Pushpapraj Singh, 08-03-2019 to 07-03-2023, 124 Lakh

  9. Development of Ultrafast Photo-detector and AC Solar Cell Based on Electric Double Layer Assisted Transient Opto-Electronic Conversion at Semiconductor-Ionic Liquid Interfaces, IRD, IIT Delhi,Co-PI: Prof. Samaresh Das, Prof. Vikram Kumar, Prof. Ankur Gupta , 16-12-2019 to 15-12-2020, 5 Lakh

  10. Point-of-Care Devices for Detection of Oral Cancer (under MFIRP Scheme of IRD 2019 with Clemson University, USA), IRD, IIT Delhi, PI: ‪Prof. Supravat Karak, Prof. Prashant Mishra Co-PI: Prof. Samaresh Das, Prof. Sandeep Kumar Jha, 24-09-2019 to 23-09-2020, 5 Lakh

Completed:

  1. Fabrication and Characterization of High Efficiency Scalable Visible to Infrared Junctionless Phototransistors for Silicon Photonics, Science and Engineering Research Board (SERB), SERB, DST, PI: Prof. Samaresh Das, Co-PI: Prof. Ananjan Basu, 20-09-2016 to 19-09-2019, 74 Lakh

  2. MEMS based Non-volatile Memory (NVM) for Harsh Environment Data Storage, SERB, DST, PI: Prof. Pushpapraj Singh, Co-PI: Prof. Samaresh Das, 22-03-2017 to 21-03-2020, 55 Lakh

  3. Quantum Dots Photodetectors, IIT Delhi, PI: Prof. Samaresh Das, 11 Lakh

  4. Fabrication and Testing of Multilayer Nano-crystals Flash Memory Device,IRD, IIT Delhi, PI: Prof. Samaresh Das, 12-10-2014 to 06-09-2016, 1 Lakh


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Ongoing:

Ph.D. Students

Alka Jakjar
Area:  Development of highly efficient terahertz modulators and detectors
Supervisor : Prof. Samaresh Das

John Wellington J
Area:  Infrared Detectors
Supervisor : Prof. Samaresh Das and Prof. Samit K Ray

Harmanpreet Kaur Sandhu
Area:  GaN based Light Emitting Devices
Supervisor : Prof. Samaresh Das, Prof. Alok Jain

Sumit Sharma
Area:  Electronic Biosensors

Supervisor :Prof. Samaresh Das, Prof. Prashant Mishra

Anish Bhargav
Area:  Superconducting circuit and Photon detectors
Supervisor :Prof. Samaresh Das, Prof. Rajib Rakshit

Suprovat Ghosh
Area:  THz Modulators and Filters
Supervisor :Prof. Samaresh Das, Prof. Ananjan Basu

Pankaj Sharma
Area:  Lead free material based MEMS devices

Supervisor :Prof. Ratnamala Chatterjee, Prof. Samaresh Das

Prabal Dweep Khanikar
Area:  Organic inorganic hybrid photodetectors

Supervisor :Prof. Samaresh Das, Prof. Ebinazar B Namdas and Prof. Shih-Chun Lo

Santanu Maity
Area:  Quantum Nanoelectronics in 2D transition metal chalcogenides

Supervisor :Prof. Samaresh Das, Prof. Rajendra Singh

Richa Mudgal
Area:  Spin Injection in 2D Materials

Supervisor :Prof. P. K. Muduli, Prof. Samaresh Das

Nidhi Yaduvanshi
Area:  Infrared Detectors based on 2D Materials
Supervisor :Prof. Tashi Nautiyal, Prof. Samaresh Das

Pinki
Area:  Low dimensional semiconductor structures for optoelectronic device applications
Supervisor : Prof. Samaresh Das and Prof. Rahul Mishra

Biswajit Khan
Area:  Semiconductor devices for quantum information technology
Supervisor : Prof. Samaresh Das


M.Tech. Students

Rupesh kumar
Thesis title :  Design of High mobility 2-D material based Schottky diode as terahertz detector
Year:  2022
Email:  crf202589@care.iitd.ac.in
LinkedIn Id : https://www.linkedin.com/in/rupesh-kumar-56b7171b8

Km. Meenu
Thesis title :  Design and Simulation of Reconfigurable Nanowire MOSFET
Year:  2022
Email:  crf202581@iitd.ac.in
LinkedIn Id : https://www.linkedin.com/mwlite/in/meenu-mithaliya-34b6b320b

Vishal Mishra
Thesis title :  Inp based HEMT Simulation
Year:  2022
Email:  crf202591@iitd.ac.in
LinkedIn Id :   

Anagani Naga Malleswara Rao
Thesis title :  AlN on SOI pMUTs for Ultrasonic Power Transfer
Year:  2022
Email:  crf202572@care.iitd.ac.in
LinkedIn Id : https://www.linkedin.com/in/naga-malleswara-rao-210703172

Mohit Nagesh Dorle
Thesis title :  Design and Simulation of Reconfigurable MOSFET for Photodetection
Year:  2022
Email:  jid202558@iitd.ac.in
LinkedIn Id : https://www.linkedin.com/in/mohit-dorle-a8409a172

Mridul Sahai
Thesis title :  SOI Switch Simulation
Year:  2022
Email:  crf202584@iitd.ac.in LinkedIn Id : https://www.linkedin.com/in/mridul-sahai-sharma-3612301b3



Alumni:

Ph.D.

Vaibhav Rana
Area:  Piezoresistive MEMS sensors
Supervisor : Prof. Pushparaj Singh, Prof. Samaresh Das

Veerendra Dhyani
Research Area: High Efficiency Photodetector Based on Semiconductor Nanostructures for Visible to Infrared Wavelengths
Current position: postdoc Trinity college Dublin

Priyanka Dwivedi
Research Area: MEMS Integrated Semiconductor Nanostructures for Sensing applications
Email: pdpriyankadwivedi@gmail.com
Current position: Assistant prof. IIIT Sri City Chittoor

Akshay Moudgil
Research Area:High performance uv photodetectors and biosensors based on nanostructured metal oxide semiconductor and its heterostructure
Email: akshaymoudgil@gmail.com
Current position: postdoc NTU Singapore

Wasi Uddin
Research Area: Quantum Electron Devices Based on Group-IV Semiconductor



M.Tech.

Anurag Singh
Thesis Topic:  Strain Induced Photo-Current Modulation of Nanowire Field Effect Transistor
Year: 2019
Current Position: Engineer at Qualcomm Bangalore
LinkedIn Id:  https://www.linkedin.com/in/anusngh003/

Keshav Kumar Sharma
Thesis Topic:  Fabrication and Characterization of Ultraviolet Photodetectors based on Metal Oxide Semiconductors
Year: 2019
Current Position: Pursuing PhD in Indian Institute of Science, Bangalore
LinkedIn Id:  https://www.linkedin.com/in/keshav-sharma-847b55165/

Ankit Singh
Thesis Topic:  Study of Electronic & Optoelectronic Properties of Silicon Junctionless Nanowire Transistors:TCAD Simulation
Year: 2018
Current Position: Digital IC Design Engineer at Marvell India Pvt Ltd, Pune
LinkedIn Id:  https://www.linkedin.com/in/ankitt-singh/

Sahil Soneja
Thesis Topic:  Fabrication and Characterisation of Tungsten Oxide Based Back Gated Field Effect Transistor
Year: 2018
Current Position: SoC Design Engineer · Intel Corporation
LinkedIn Id:  https://www.linkedin.com/in/sahilsoneja/

Neeraj Kumar
Thesis Topic:  Development of UV photo detector and its Prototyping
Year: 2018
Current Position: ATC, at Airports Authority of India, Jammu
LinkedIn Id:  https://www.linkedin.com/in/neeraj-kumar-18158b2b/

Mohd Saleem Pasha
Thesis Topic:  Fabrication And Characterization Of Metal/Germanium Schottky Diode
Year: 2017
Current Position: Qualcomm India, Hyderabad
LinkedIn Id:  https://www.linkedin.com/in/saleem-pasha-mohd-5a86a537/

Ankita Chawla
Thesis Topic:  Fabrication And Characterization Of Metal Coated Silicon Cone Field Emitter Arrays
Year: 2017
Current Position: Scientist at Space Applications Centre ISRO Ahmadabad
LinkedIn Id:  https://www.linkedin.com/in/ankita-chawla-2697aa3a/

Akshay D Potuwar
Thesis Topic:  Non Volatile Memory Devices Based On Metal Nanocrystals Embedded In High-K Dielectrics
Year: 2017
Current Position: Formal Verification Engineer at Oski Technology, Delhi
LinkedIn Id:  https://www.linkedin.com/in/akshay-potuwar-29577a126/

Kanhaiya Lal Akodiya
Thesis Topic:  Fabrication, Characterization And Testing Of Metal Oxide Thin Film Gas Sensor
Year: 2016
Current Position: Junior Telecom Officer at BSNL, Trivandrum Kerala
LinkedIn Id:  https://www.linkedin.com/in/kanhaiya-akodiya-b17689127/

Harsh Bhatt
Thesis Topic:  Design of RF Switch in SOI process for 5G application
Year: 2021
Current Position: Digital Design Engineer · Texas Instruments
LinkedIn Id:  https://www.linkedin.com/in/harsh-bhatt-2b4056140/

Ayushi dixit
Thesis Topic:  Design of InP based Schottky barrier diode for the detection of THz wave.
Year: 2021
Current Position: Digital Design Engineer · Texas Instruments
LinkedIn Id:  https://www.linkedin.com/in/ayushi-dixit-92b0b2127/

Pyla Bhargav
Thesis Topic:  Device Simulation on Electrically Tunable THz Modulators Based on Tunable Slot Waveguide
Year: 2021
Current Position: Product and Test Engineer · Analog Devices
LinkedIn Id:  https://www.linkedin.com/in/pyla-bhargav-558366ba/

Golla Nagendra
Thesis Topic:  Device Design and Simulation of InP HEMT
Year: 2021
Current Position: JPhysical Design Engineer, TSMC
LinkedIn Id:  https://www.linkedin.com/in/nagendragolla/

Nitin Bharadwaj
Thesis Topic:  Design and Fabrication of MEMS based infrared Bolometer
Year: 2020
Current Position: Deputy Manager · Reliance Jio Infocom Limited
LinkedIn Id:  https://www.linkedin.com/in/nitin-bhardwaj-801bb7127/

Shashank Mittal
Thesis Topic:  Design and Fabrication of THz metamaterial device
Year: 2020
Current Position: Physical Design Engineer · AMD
LinkedIn Id:  https://www.linkedin.com/in/shashank-mittal-681249188/

Abha Panchal
Thesis Topic:  Design and Simulation of MEMS THz Filter based on Metamaterials
Year: 2020
Current Position: Scientist D, DRDO (SSPL)
LinkedIn Id:  https://in.linkedin.com/in/abha-panchal-204805115




Journals

    2021

  1. M Garg, DS Arya, S Sharma, S Kumar, W Uddin, S Das, Y Chiu, P Singh, “JMEMS Letters Highly Responsive Metal Oxide (V2O5)-Based NEMS Pirani Gauge for In-Situ Hermeticity Monitoring", Journal of Microelectromechanical Systems. 30, 3, 340 (2021)

  2. V Dhyani, S Singh, A Jakhar, A Sarkar, S Das, SK Ray, “Low noise, high detectivity polarization sensitive room temperature infrared photodetectors based on Ge quantum dots decorated Si-on-insulator nanowire field effect transistors", Nanotechnology. 32, 315205 (2021)

  3. A. Moudgil, S. Sharma and S. Das, “In2Se3/Silicon-on-Insulator Heterojunction Phototransistor for Low Noise Dual-Band Detection”, IEEE Electron Device Letters. 42, 5, 755 (2021)

    4. 2020

  4. P Dwivedi, S Dhanekar, S Das, “Near Room Temperature Sensing by In2O3 Decorated Silicon Nanowires for Sensitive Detection of Ethanol” IEEE Sensors Journal 21, 7275 (2020).

  5. A. Jakhar, P. Kumar, S. Husain, V. Dhyani, and S. Das*, “Integration of Nanometer-Thick 1T-TaS2 Films with Silicon for an Optically Driven Wide-Band Terahertz Modulator” ACS Appl. Nano. Mater. 3, 11, 10767 (2020).

  6. A Jakhar, V Dhyani, S Das, “Room temperature terahertz detector based on single silicon nanowire junctionless transistor with high detectivity”, Semicond. Sci. Technol. 35, 125020 (2020).

  7. V. Rana, G Ahmad, AK Ramesh, S Das, P Singh, “Diameter-Dependent Piezoresistive Sensing Performance of Junctionless Gate-All-Around Nanowire FET” IEEE Transactions on Electron Devices 67, 2884 (2020).

  8. HK Sandhu, A Sharma, A Jain, S Das, “Efficiency enhancement in InGaN-based laser diodes using an optimized Al0.12Ga0.88N electron blocking layer”, Semicond. Sci. Technol. 35, 105017 (2020).

  9. Nidhi Nidhi, Alka Jakhar, Wasi Uddin, Jitendra Kumar, Tashi Nautiyal, Samaresh Das, “Nanolayered Black Arsenic–Silicon Lateral Heterojunction Photodetector for Visible to Mid-Infrared Wavelengths”, ACS Appl. Nano. Mater. 3, 9, 9401 (2020).

  10. W. John; V. Dhyani, G Yordan; A. Gangnaik, S. Biswas, J. Holmes, A. Das, S K Ray, S Das, “Ultra-High Negative Infrared Photoconductance in Highly As-doped Germanium Nanowires Induced by Hot Electron Trapping”, ACS Applied Electronic Materials 2, 1934 (2020).

  11. V Rana, P Gangwar, JS Meena, AK Ramesh, KN Bhat, S Das, P Singh, “Highly sensitive wearable flexible strain sensor based on poly-crystalline MoS2 thin film” Nanotechnology 31, 385501 (2020).

  12. W Uddin, V Dhyani, G Ahmad, V Kumar, PK Muduli, S Das “Photo Induced Negative Differential Transconductance in Back-Gated Layered MoSe2/p-Ge Heterojunction Field Effect Transistors” ACS Applied Electronic Materials 2, 1567 (2020).

  13. V Dhyani, S Maity, S Mukherjee, SK Ray, V Kumar, S Das, “Broadband infrared photodetector based on nanostructured MoSe2/Si heterojunction extended up to 2.5 μm spectral range” Nanotechnology 31, 455208 (2020).

  14. V Dhyani, G Ahmad, N Kumar, S Das , “Size-Dependent Photoresponse of Germanium Nanocrystals-Metal Oxide Semiconductor Photodetector”, IEEE Transactions on Electron Devices 67, 558 (2020).

  15. W Uddin, S Maity, V Dhyani, G Ahmad, YM Georgiev, S Das, “Resonant tunneling and hole transport behavior in low noise silicon Tri-gate junctionless single hole transistor’ Semiconductor Science and Technology, 35 065011 (2020).

  16. A Jakhar, P Kumar, A Moudgil, V Dhyani, S Das, “Optically Pumped Broadband Terahertz Modulator Based on Nanostructured PtSe2 Thin Films” Advanced Optical Materials, 1901714 (2020).

  17. S Dhawan, A Moudgil, H Singh, S Gahlawat, J Babu, P. Ingole, S. Das and V. Haridas, “Organic field effect transistors based on self-assembling core-modified peptidic polymers”, Molecular Systems Design & Engineering 5 (4), 847-855 (2000).

    18. 2019

  18. A Moudgil, Keshav Sharma, S Das, “In2O3/TiO2 Heterostructure for Highly Responsive Low Noise Ultraviolet Photodetector” IEEE Transactions on Electron Devices 67, 166 (2019).

  19. A Moudgil, S Singh, N Mishra, P Mishra, S Das, “MoS2/TiO2 Hybrid Nanostructure‐Based Field‐Effect Transistor for Highly Sensitive, Selective, and Rapid Detection of Gram‐Positive Bacteria”, Advanced Materials Technologies, doi.org/10.1002/admt.201900615 (2019).

  20. V Dhyani, M Das, W Uddin, PK Muduli, S Das, "Self-powered room temperature broadband infrared photodetector based on MoSe2/germanium heterojunction with 35 A/W responsivity at 1550 nm" Applied Physics Letters 114 (12), 121101 (2019).

  21. A Moudgil, N Kalyani, P Mishra, S Das, “Azurin-TiO2 hybrid nanostructure field effect transistor for efficient ultraviolet detection”, Nanotechnology 30, 495205 (2019).

  22. V Dhyani, P Kumari, S Maity, S Das, “Low-cost flexible 1.1 μm-1.6 μm photodetector fabricated by hydrothermal grown large area MoSe2 nanostructures” Optical Sensors 11028, 110282G (2019).

  23. V Dhyani, A Jakhar, J Wellington, S Das, “Diameter-dependent photoresponse with high internal gain in a back gated single Si nanowire phototransistor” - Journal of Physics D: Applied Physics, 52, 425103 (2019).

  24. Wasi Uddin, Mohd Saleem Pasha, Veerendra Dhyani, Sarmistha Maity and Samaresh Das “Temperature Dependent Current Transport Behaviour of Improved Low Noise NiGe Schottky Diode for Low Leakage MOSFET". Semi. Sci. Tech. 34, 035026 (2019).

  25. S. Singh, A. Moudgil, N. Mishra, S. Das, P. Mishra, Vancomycin functionalized WO3 thin film-based impedance sensor for efficient capture and highly selective detection of Gram-positive bacteria, Biosensors and Bioelectronics, 136, 23-30 2019.

    26. 2018

  26. Akshay Moudgil, Veerendra Dhyani, Samaresh Das “High speed efficient ultraviolet photodetector based on 500 nm width multiple WO3 nanowires”, Applied Physics Letters 113, 101101 (2018).

  27. Priyanka Dwivedi, Dhairya Singh Arya, Saakshi Dhanekar, Samaresh Das, “Development of scalable planar MEMS technology for low power operated ethanol sensor” J. Micromech. Microeng., 28, 105020, 2018.

  28. SahilSoneja, Priyanka Dwivedi, Saakshi Dhanekar, Samaresh Das, Vikram Kumar, "Temperature Dependent Electrical Characteristics of Nanostructured WO3 Based Ambipolar Bottom Gate FET” IEEE Transactions on Nanotechnology, 17, 1288, 2018.

  29. Moudgil A, Kalyani N, Sinsinbar G, Das S and Mishra P “S-layer protein for Resistive Switching and Flexible Nonvolatile Memory Device” ACS Appl. Mater. Interfaces, 10 (5), 4866-4873, 2018.

  30. Priyanka Dwivedi, Saakshi Dhanekar, Monika Agrawal and Samaresh Das,” TiO2/nano-Si Heterostructure based Device Prototype for E-nose Application”, IEEE Transactions on Electron Devices, 65, No. 3, pp.1127-1131, 2018.

  31. Priyanka Dwivedi, Saakshi Dhanekar, Samaresh Das, “MoO3/Nano –Si Heterostructure based Highly Sensitive and Acetone Selective Sensor Prototype: a key to non-invasive detection of diabetes”, Nanotechnology, vol. 29, No. 27, pp. 5503-5511, May 2018.

  32. B Behera, S Maity, AK Katiyar, S Das "High-performance flexible resistive memory devices based on Al2O3: GeOx composite", Superlattices and Microstructures 117, 298-304 (2018).

    33. 2017

  33. VeerendraDhyani, Priyanka Dwivedi, Saakshi Dhanekar, and Samaresh Das, “High performance broadband photodetector based on MoS2/porous silicon heterojunction”, Applied Physics Letters 111, 191107(2017).

  34. Priyanka Dwivedi, Samaresh Das, Saakshi Dhanekar, “Wafer-Scale Synthesized MoS2/Porous Silicon Nanostructures for Efficient and Selective Ethanol Sensing at Room Temperature”, ACS Appl. Mater. Interfaces 9, (2017), 21017−21024.

  35. Priyanka Dwivedi, Neha Chauhan, P. Vivekanandan, Samaresh Das , D. Sakthi Kumar , Saakshi Dhanekar, “Scalable fabrication of prototype sensor for selective and sub-ppm level ethanol sensing based on TiO2 nanotubes decorated porous silicon”, Sens. Actuators B: Chem. 249 (2017) 602–610, doi.org/10.1016/j.snb.2017.03.154.

  36. Priyanka Dwivedi, Samaresh Das and Saakshi Dhanekar, “Polymer functionalized nanostructured porous silicon for selective water vapor sensing at room temperature”, Superlattices and Microstructures, 104 (2017) 547-552.

  37. Wasi Uddin, Samaresh Das, YordanM.Georgiev, David A.Williams, “Dopant Induced Single Electron Tunneling within the Sub-bands of Single Silicon Nanowire Tri-gate Junctionless n-MOSFET” , J. Phys. D: Appl. Phys. 50 365104 (2017).

  38. Veerendra Dhyani, and Samaresh Das, "High-Speed Scalable Silicon-MoS2 P-N Heterojunction Photodetectors”, 7(1), 44243 ", Scientific Reports, (2017).

  39. Neeti Kalyani, Akshay Moudgil, Samaresh Das, Prashant Mishra; "Metalloprotein based scalable field effect transistor with enhanced switching behaviour", Sensors and Actuators B: Chemical, 246, 363 (2017).

  40. Samaresh Das, Veerendra Dhyani, Yordan M. Georgiev and David A. Williams, "High sensitivity silicon single nanowire junctionless phototransistor", Appl. Phys. Lett., 108, 063113 (2016).

  41. PriyankaDwivedi, SaakshiDhanekar, and Samaresh Das, Effect of TiO2functionalization on nano-porous silicon for selective alcohol sensing at room temperature", Journal of Materials Science & Technology", 33, (2017) 516–522.

    42. 2016 and before

  42. PriyankaDwivedi, SaakshiDhanekar, and Samaresh Das. “Synthesis of α -MoO3 Nano-Flakes by Dry Oxidation of RF Sputtered Mo Thin Films and Their Application in Gas Sensing”, Semiconductor Science and Technology 31 (11), 115010 (2016).

  43. S Manna, R Aluguri, R Bar, S Das, N Prtljaga, L Pavesi, SK Ray, "Enhancement of photoluminescence intensity of erbium doped silica containing Ge nanocrystals: distance dependent interactions", Nanotechnology 26, 45202 (2015).

  44. S. Manna, R. Aluguri, A. Katiyar, S. Das, A. Laha, H. Osten, and S. K. Ray, "MBE grown Si and Si1-xGex quantum dots embedded within epitaxial Gd2O3 on Si (111) substrate for floating gate memory device", Nanotechnology 24, 505709(2014).

  45. Y. M. Georgiev, N. Petkov, B. MaCarthy, R. Yu, V. Djara, D. O'Connel, O. Lotty, A. M. Nightingale, N. Thamsumet, J. C. deMello, A. Blake, S. Das, J. D. Holmes, "Fully CMOS-compatible top-down fabrication of sub-50 nm silicon nanowire sensing devices", Microelectronic Engineering 118, 47 (2014).

  46. R. Yu, Y. M. Georgiev, S. Das, R. Hobbs, I. M. Povey, N. Petkov, M. Shayesteh, D. O'Cornell, J. D. Holmes, and R. Duffy, "Junctionless nanowire transistor fabricated with high mobility Ge channel", PSS Rapid Research Letters 1, 65 (2014).

  47. S Manna, R Aluguri, S Das, RK Singha, SK Ray, “Electroluminescence from metal-insulator-semiconductor tunneling diodes using compressively strained Ge on Si0.5Ge0.5 virtual substrates”, Optics Express 21, 28219-28231(2013).

  48. S Das, R Yu, K Cherkaoui, P Razavi, S Barraud, “Performance of 22 nm Tri-Gate Junctionless Nanowire Transistors at Elevated Temperatures”, ECS Solid State Letters 2 (8), Q62-Q65 (2013).

  49. R Yu, AN Nazarov, VS Lysenko, S Das, I Ferain, P Razavi, M Shayesteh, A Kranti, R Duffy, J-P Colinge, “Impact ionization induced dynamic floating body effect in junctionless transistors” , Solid-State Electronics 90, 28-33 (2013).

  50. A Guchhait, S Das, SK Ray, AJ Pal, “Photoinduced Hole-Transfer in Nanoparticle-Dye Hybrid Composites: A Route for Exciton Dissociation Leading to Photovoltaic Devices” , Nanoscience and Nanotechnology Letters 5 (1), 13-18 (2013).

  51. S Das, S Manna, RK Singha, R Aluguri, SK Ray, “Effect of growth temperature and post-growth annealing on luminescence properties of molecular beam epitaxy grown single layer Ge quantum dots” , Journal of Applied Physics 113 (6), 063101-063101-8 (2013).

  52. S K Ray, S Maikap, W Banerjee and S Das, “Nanocrystals for silicon-based light-emitting and memory devices” , J. Phys. D: Appl. Physics, 46, 153001 (2013).

  53. Y Yacoby, N Elfassy, SK Ray, RK Singha, S Das, E Cohen, S Yochelis, R Clarke, “Morphology and growth of capped Ge/Si quantum dots”, Journal of Nanoparticle Research 15 (5), 1-7 (2013).

    54. Renan DoriaTrevisoli, Rodrigo TrevisoliDoria, Michelly de Souza, Samaresh Das, Isabelle Ferain, Marcelo Antonio Pavanello, “Surface Potential-Based Drain Current Analytical Model for Triple-Gate Junctionless Nanowire Transistors”, IEEE Transactions on Electron Devices 59, 3510 (2012).

  54. T. Rudenko, A. Nazarov, I Ferain, S Das, R Yu, S Barraud, P Razavi, ‘Mobility enhancement effect in heavily doped junctionless nanowire SOI MOSFET’, Applied Physics Letters 101, 213502 (2012).

  55. Renan DoriaTrevisoli, Rodrigo TrevisoliDoria, Michelly de Souza, Samaresh Das, Isabelle Ferain, Marcelo Antonio Pavanello, “The zero-temperature coefficient in junctionless nanowire transistors”, Applied Physics Letters 101, 062101 (2012).

  56. Ran Yu, Samaresh Das, Isabelle Ferain, PedramRazavi, Maryam Shayesteh, AbhinavKranti, Ray Duffy, and Jean-Pierre Colinge, “Device design and estimated performance for P-type junctionless transistors on bulk germanium substrates”, IEEE Transactions on Electron Devices 59, 2308 (2012).

  57. PedramRazavi, GiiogosFagas, Isabelle Ferain, Ran Yu, Samaresh Das, and Jean-Pierre Colinge “Influence of Channel Material Properties on Performance of Nanowire Transistors”, Journal of Applied Physics 111, 124509 (2012).

  58. Rakesh Aluguri, Samaresh Das, RajkumarSingha, Samit K Ray, “Size dependent charge storage characteristics of MBE grown Ge nanocrystals on surface oxidized Si”, Current Applied Physics (2012), doi: 10.1016/j.cap.2012.06.002.

  59. S. Das, R. Aluguri, S. Manna, R. K. Singha, A. Dhar, L. Pavesi and S. K. Ray, “Optical and electrical properties of undoped and doped Ge nanocrystals”, Nanoscale Research Letters 7, 143 (2012).

  60. R. Aluguri, S. Das, R. K. Singha, S. Manna, A. Dhar, and S. K. Ray, “Photoluminescence characteristics of Er doped Ge nanocrystals embedded in alumina matrix”, Optical Materials34, 1430 (2012).

  61. S Manna, S Das, S. P. Mondal, R. K. Singha and S K Ray, “High Efficiency Si/CdS Radial Nanowire Heterojunction Photodetectors Using Etched Si Nanowire Templates”, Journal of Physical Chemistry C 116, 7126-7133 (2012).

  62. S Manna, N Prtljaga, S Das, N Daldosso, S K Ray and L Pavesi, “Photophysics of resonantly and non-resonantly excited erbium doped Ge nanowires”, Nanotechnology 23, 065702 (2012).

  63. K. Das, S. Das, R. K. Singha, S. K. Ray and A. Raychaudhuri, “Preferential ordering of self-assembled Ge islands on focused ion-beam patterned Si(100)”, Journal of Nanoparticle Research. 14, 725 (2012).

  64. S. Das, R. K. Singha, A. Anopchenko, N. Daldosso, L. Pavesi, A. Dhar, and S. K. Ray, “Electroluminescence and charge storage characteristics of quantum confined germanium nanocrystals”, Journal of Applied Physics 110, 024310 (2011).

  65. Mallar Ray, Nil RatanBandyopadhyay, UjjwalGhanta, Robert F. Klie, Ashit Kumar Pramanick, Samaresh Das, Samit K. Ray, and Syed Minhaz Hossain, ‘Temperature dependent photoluminescence from porous silicon nanostructures: Quantum confinement and oxide related transitions’, Journal of Applied Physics 110, 094309 (2011).

  66. S. Das, K. Das, R. K. Singha, S. Manna, A. Dhar, S. K. Ray and A. Raychaudhuri, "Improved IR photoluminescence characteristics from circularly ordered self-assembled Ge islands”, Nanoscale Research Letters 6:416(2011).

  67. S. K. Ray, S. Das, K. Das, R. K. Singha, S. Manna, A. Dhar, "Structural and Optical Properties of Germaniun Nanostructures on Si (100) and Embedded in High-k Oxides", Nanoscale Research Letters 6:224 (2011).

  68. S. Das, S. Manna, R. K. Singha, A. Anopchenko, N. Daldosso, L. Pavesi, A. Dhar, and S. K. Ray, “Light emission and floating gate memory characteristics of germanium nanocrystals”, Physica status solidi (a) 208, 635 (2011).

  69. S. Das, R. K. Singha, S. Manna, S. Gangopadhyay, A. Dhar and S. K. Ray, “Microstrustural, chemical bonding, stress development and charge storage characteristics of Ge nanocrystals embedded in hafnium oxide”, Journal of Nanoparticle Research (2011), 13:587–595.

  70. S. Das, R. K. Singha, S. Gangopadhyay, A. Dhar and S. K. Ray, “Microstrustural characteristics and phonon structures in luminescence from surface oxidized Ge nanocrystals embedded in HfO2 matrix”, Journal of Applied Physics 108, 053510(2010).

  71. R. K. Singha, S. Manna, S. Das, A Dhar and S K Ray, “Room temperature infrared photoresponse of self-assembled Ge/Si (001) quantum dots grown by molecular beam epitaxy”, Applied Physics Letter 96, 233113 (2010).

  72. S. K. Ray, R. K. Singha, S. Das, S. Manna, A. Dhar, “Ge based nanostructures for electronic and photonic devices”, Microelectronics reliability 50, 674 (2010).

  73. R. K. Singha, S. Das, A. Dhar, S. K. Lahiri, and S. K. Ray, “Single Hole Charging at Room Temperature of Ge Quantum Dots Grown on Si (001) by Molecular Beam Epitaxy”, Nanoscience and Nanotechnology Letters 1, 1-5 (2009).

  74. S. K. Ray, R. K. Singha, S. Das, K. Das, A. Dhar, “Properties of self-assembled Ge Islands grown by molecular beam epitaxy”, International J. Nanoechnology 6, 552 (2009).

  75. S Das, R K Singha, K Das, A Dhar, and S K Ray, “Silicon Dioxide Embedded Germanium Nanocrystals Grown Using Molecular Beam Epitaxy for Floating Gate Memory Devices”, Journal of Nanoscience and Nanotechnology 9, 5484 (2008).

  76. R K Singha, S Das, S Majumder, K Das, A Dhar, and S K Ray, “Evolution of strain and composition of Ge islands o Si(001) grown by molecular beam epitaxy during postgrowth annealing”, Journal of Applied Physics 103, 114301 (2008).

  77. R K Singha, S Das, K Das, S Majumder,ADhar, and S K Ray, “Shape and size distribution of MBE grown self-assembled Ge islands on Si (001) substrates”, J. Nanoscience and Nanotechnology 8, 4101 (2008).

  78. S. P. Mondal, V. S. Reddy, S. Das, A. Dhar and S. K. Ray, “Memory effect in junction-like CdS nanocomposites/ conducting polymer poly [2-ethoxy-5-(2-ethylhexyloxy)-1,4-phenylene-vinylene] heterostructure”, Nanotechnology 19, 215306 (2008).

  79. R. K. Singha, K. Das, S. Das, A. Dhar and S. K. Ray, “Characteristics of Ge nanocrystals grown by RF magnetron sputtering”, Advanced Materials Research31, 89 (2008).

  80. S. Das, K. Das, R. K. Singha, A. Dhar, and S. K. Ray, “Improved Charge Storage Characteristics of Ge Nanocrystals Embedded In Hafnium Oxide”, Applied Physics Letters 91, 233118 (2007).

  81. V S Reddy, S Das, S K Ray and A Dhar, “Studies on conduction mechanisms of pentacene based diodes using impedance spectroscopy”, J. Phys. D: Appl. Phys. 40, 7687 (2007).

Patents

  1. Saakshi Dhanekar, Priyanka Dwivedi, Samaresh Das, (2020) “MOLYBDENUM TRIOXIDE AND NANO SILICON CHIPS FOR ACETONE DETECTION", Patent Number: 201711002327

  2. Saakshi Dhanekar, Priyanka Dwivedi, Pushpapraj Singh, Samaresh Das,(2017) “CANTILEVER SENSOR DEVICE BASED ON SUSPENDED METAL OXIDE AND SILICON NANOSTRUCTURES AND FABRICATION METHOD THEREOF", Patent Number: 201711029361

  3. Saakshi Dhanekar, Priyanka Dwivedi, Samaresh Das, (2017) “Method for fabrication of MEMS integrated sensor", Patent Number: 201811014593

  4. R. K. Singha, K. Das, S. Das, A. Dhar and S. K. Ray, (2008) “Characteristics of Ge nanocrystals grown by RF magnetron sputtering”, in an Edited book “Semiconductor Photonics: Nanostructured Materials ad Devices” eds. S. J. Chua, J.H.Teng, O.Wada, R. de la Rue and X. H. Tang, Trans Tech Publications ltd., Switzerland, ISBN 0-87849-471-5.

  5. S. Das, R. K. Singha, S. Gangopadhyay, A. Dhar& S. K. Ray, “Luminescenec fine structures from Ge nanocrystals embedded in HfO2 matrix”, in an Edited book ‘1st Intl. Workshop on Si based nano-electronics and –photonics’ eds. S. Chiussi, P. Alpuim, J. Murota, P. Gonzalez, J. Serra, B. Leon, Netbiblo, Spain, ISBN: 978-84-9745-16-2.

Conferences

  1. Wasi Uddin, Veerendra Dhyani, Gufran Ahmad, Samaresh Das Carrier Transport In Multilayer n-MoSe2 And p-Germanium Heterojunction Back Gated Field Effect Transistors,International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA),10-Aug-2020 , Hsinchu, Taiwan, 10 Aug 2020

  2. Akshay Moudgil, Sumit Sharma, Samaresh Das,Highly Efficient Nanostructured PtSe2 FET for Toxic Gas Detection, IEEE 20th International Conference on Nanotechnology (IEEE-NANO), Montreal, QC, Canada, Canada ,29 July 2020

  3. Priyanka Dwivedi, Saakshi Dhanekar, Samaresh Das, \93Synthesis of MoO3 nanostructures for sensing applications\94, ICONSAT 2018 at Indian Institute of Science Bangalore, 21-23 Mar, 2018.

  4. Priyanka Dwivedi, Saakshi Dhanekar, Samaresh Das, \93Room Temperature operated Selective Alcohol detection using MoS2 decorated Porous Silicon\94 at La Grande Motte, France, 11-16 Mar, 2018.

  5. Priyanka Dwivedi, Neha Chauhan, Veerendra Dhyani, Sakthi Kumar, Saakshi Dhanekar Design, Fabrication, Characterization and Packaging of Bottom Gate and Nano-porous TiO2 based FET, IEEE NANO 2017 at Pittsburgh USA, 25-28 July, 217

  6. Priyanka Dwivedi, Saakshi Dhanekar, Samaresh Das, \93Optimized process for synthesis of MoO3 nanostructures using Mo thin films\94 (IUMRS-ICYRAM 2016) at Indian Institute of Science Bangalore, 11-15 Dec, 2016

  7. Priyanka Dwivedi, Saakshi Dhanekar, Samaresh Das \93Low ppm selective sensing of alcohol by titania deposited nano-porous silicon sensor\94 Porous Semiconductors - Science and Technology (PSST 2016) at Tarragona, Spain, March 6-11, 2016

  8. Priyanka Dwivedi, Saakshi Dhanekar, Samaresh Das, D. Sakthi Kumar \93Selective ethanol sensing from TiO2 nanostructures decorated porous silicon\94 (ICMS-2016) at Jeju, Korea , July 10-13, 2016

  9. Priyanka Dwivedi, Saakshi Dhanekar, Samaresh Das, \93Selective acetone electrical detection using functionalized nano-porous silicon\94 IEEE (INDICON 2015) at Jamia Millia Islamia (JMI), New Delhi India,17-20 Dec, 2015. (Best Paper Award)

  10. Priyanka Dwivedi, Saakshi Dhanekar, Samaresh Das, \93Room temperature moisture detection by polymer functionalized nano-porous silicon\94 (ICANN 2015) at IIT Guwahati, 8-11 Dec, 2015

  11. Veerendra Dhyani and Samaresh Das \93Synthesis and Characterization of Ge NWs for Optoelectronics\94 ICMTech New Delhi, India (01- 04 March 2016) (Oral presentation).

  12. Priyanka Dwivedi, Saakshi Dhanekar, Samaresh Das \93Low ppm selective sensing of alcohol by titania deposited nano-porous silicon sensor\94 Porous Semiconductors - Science and Technology (PSST 2016) at Tarragona, Spain, March 6-11, 2016.

  13. Priyanka Dwivedi, Saakshi Dhanekar, Samaresh Das, D. Sakthi Kumar \93Selective ethanol sensing from TiO2 nanostructures decorated porous silicon\94 (ICMS-2016) held at Jeju, Korea , July 10-13, 2016.

  14. Veerendra Dhyani, Jyoti Sharma , Neeraj Kumar and Samaresh Das \93Vertical Silicon Nanowire P-N Junction Color Photodetector for Large Area Nanophotonics\94, Conference on Emerging Materials (CEMAT) July 18 - 19, 2016 held at IISc Bangalore

  15. Wasi Uddin and Samaresh Das \93Multi Dopant Resonance Conduction in Tri-gate Junctionless MOSFET\94, Conference on Emerging Materials (CEMAT) July 18 - 19, 2016 held at IISc Bangalore

  16. Veerendra Dhyani, Sudhir Chandra, Khushal Bapna, and Samaresh Das. \93 Ge nanowire metal-semiconductor-metal photodetector for visible to near infrared wavelength\94 ICMAT 2015 Singapore (28 June 2015 -03 July 2015). (Poster presentation)

  17. Priyanka Dwivedi, Saakshi Dhanekar, Samaresh Das, \93Selective acetone electrical detection using functionalized nano-porous silicon\94 IEEE International Conference (INDICON), New Delhi, 2015, pp. 1-4. doi: 10.1109/INDICON.2015.7443518 (Best Paper Award).

  18. Priyanka Dwivedi, Saakshi Dhanekar, Samaresh Das \93Room temperature moisture detection by polymer functionalized nano-porous silicon\94 (ICANN 2015) at I.I.T Guwahati, 8-11 Dec 2015.

  19. Deepam Dubey, Veerendra Dhyani, Neeraj Kumar and Samaresh Das, \93Resistive Switching Device Based on Transition Metal Oxide for Memory Storage Applications\94, icann-2015 - IIT Guwahati ( 08 Dec 2015- 11 Dec 2015) (Poster presentation )

  20. Neeraj Kumar, Veerendra Dhyani and Samaresh Das, \93Germanium nanocrystals based phodetector for silicon photonics\94, IWPSD 2015 IISC Bangalore ( 07 Dec 2015- 10 Dec 2015) (Poster presentation )

  21. A. Andreev, T. Ferrus, S. Das, T-Y. Yang, T. Kodera, S. Ihara, K. Horibe, S. Oda and D. A. Williams, "Charge Manipulations in Si-Based Quantum Dot Qubit Devices with Single Electron Transistors: Theory and Experiment", International Conference on Solid State Devices and Materials (SSDM)-2014, 8-10th September, Tsukuba, Japan.

  22. S. Das, T.-Y. Yang, A. Andreev, T. Ferrus and D. A. Williams, \91Charge stability of two qubit devices based on geometrically defined two isolated double quantum dots\92, Condensed Matter in Paris-2014, 24-29 th August, Universite Paris Descartes, France.

  23. T.-Y. Yang, S. Das, T. Ferrus, A. Andreev, and D. A. Williams, \91Charge sensing of two isolated double quantum dots\92, 2014 Silicon Nanoelectronics workshop (SNW), 08-09th June, Honolulu, HI, USA.

  24. S. Das, T.-Y. Yang, A. Betz, F. Gonzalez-Zalba, T. Ferrus and D. A. Williams, \91Charge motion in a two isolated silicon double quantum dot structure\92, Silicon Quantum Information Processing (SiQIP)-2013, 20 Sept., University of Surrey, UK.

  25. Samaresh Das, Tsung-Yeh Yang, Andreas Betz, Fernando Gonzalez-Zalba, Thierry Ferrus*, and David Williams, \93DC characteristics of a two isolated double quantum dot structure in silicon\94, International Symposium on the Physics of Semiconductors and Applications (ISPSA)-XVI, B5-O-, July 2-5, 2013, Jeju, Korea.

  26. RT Doria, RD Trevisoli, M de Souza, I Ferain, S Das, MA Pavanello \93Low-Frequency Noise of nMOS and pMOS short channel junctionless nanowire transistors\94, IEEE International SOI Conference (SOI), 2012, 1-2, 1-4 Oct. 2012, NAPA, CA, USA.

  27. RD Trevisoli, RT Doria, M de Souza, I Ferain, S Das, MA Pavanello, \93The role of the incomplete ionization on the operation of Junctionless Nanowire Transistors\92\92, IEEE International SOI Conference (SOI), 2012, 1-2, 1-4 Oct. 2012, NAPA, CA, USA.

  28. Pedram Razavi, Giorgos Fagas, Isabelle Ferain, Ran Yu, Samaresh Das, \91Electron transport in germanium junctionless transistors\92, Solid-State Device Research Conference (ESSDERC), 326-329, 17-21 Sept. 2012, Bordeaux, France.

  29. Mukta Singh Parihar, Dipankar Ghosh, G Alastair Armstrong, Ran Yu, Pedram Razavi, Samaresh Das, Isabelle Ferain, Abhinav Kranti, \91Sensitivity analysis of steep subthreshold slope (S-slope) in Junctionless nanotransistors\92, 1-4 pages, 12th IEEE Conference on Nanotechnology (IEEE-NANO), 20-23 Aug, 2012, Birmingham, UK.

  30. Pedram Razavi, Isabelle Ferain, Samaresh Das, Ran Yu, Nima Dehdashti Akhavan, and Jean-Pierre Colinge \93Intrinsic Gate Delay and Energy-Delay Product in Junctionless Nanowire Transistors\94, Proceedings Ultimate Integration on Silicon (ULIS), pp. 125-128, 6-7th March, 2012, Grenoble, France.

  31. Ran Yu, Samaresh Das, Richard Hobbs, Yordon Georgiev, Isabelle Ferain, Pedram Razavi, Nima Dehdashti Akhavan, Cynthia A. Colinge and Jean-Pierre Colinge \93Top-down Process of Germanium Nanowires using EBL Exposure of Hydrogen Silsesquioxane Resist\94, Proceedings Ultimate Integration on Silicon (ULIS), pp. 145-148, 6-7th March, 2012Grenoble, France.

  32. Ran Yu, Samaresh Das, Isabelle Ferain, Pedram Razavi, Nima Dehdashti Akhavan, Cynthia A. Colinge and Jean-Pierre Colinge \93Simulation of Impact Ionization Effect in Short Channel Junctionless Transistors\94, Proceedings EUROSOI, pp. 37-38, 23-25 Jan, 2012, La Grande Motte, France.

  33. A.N. Nazarov, V.S. Lysenko, I. Ferain, S. Das, R. Yu, A. Kranti, N. Dehdashti Akhavan, P. Razavi, JP Colinge, \93Floating body effects in junctionless MuGFETs\94, Proceedings EUROSOI, pp. 93-94 , 23-25 Jan, 2012, La Grande Motte, France.

  34. 1. S. Das, R. K. Singha, A. Dhar and S. K. Ray, \93Conductive force microscopy and hole charging in Ge islands grown by RF sputtering\94, IEEE INEC, pp. 1-2, 21-24 June, 2011, Tao-Yuan, Taiwan.

  35. S. Das, Santanu Manna, Rajkumar Singha, Oleksiy Anopchenko, Nicola Daldosso, Lorenzo Pavesi, Achintya Dhar, and Samit Kumar Ray, \93Light emission and floating gate memory characteristics of germanium quantum dots\94 E-MRS 2010 Spring Meeting, Strasburg, France, June 7-11, 2010.

  36. S. Das, R. K. Singha, S. Gangopadhyay, A. Dhar & S. K. Ray, \93Luminescenec fine structures from Ge nanocrystals embedded in HfO2 matrix\94 Proc. 1stInternational Workshop on Si based nano-electronics and \96photonics (SiNEP), p. 39, Vigo, Spain, September 20 -23, 2009.

  37. S. Das, R. K. Singha, S. Manna, A. Dhar & S. K. Ray, \93Photoluminescence and Single-hole Charging in Ge Quantum Dots Grown by MBE\94 Proc. 15thInternational Workshop on The Physics of Semiconductor Devices (IWPSD), pp. 213, Solid State Physics Laboratory and Jamia Millia Islamia, Delhi, India, December 15-19, 2009.

  38. R. K. Singha, S. Das, S. Manna, A. Dhar, and S. K. Ray, "Infrared Photo current detection using inter subband transitions in MBE grown Ge Quantum dots", pp.150-1512, 15th International workshop on the physics of Semiconductor Devices (IWPSD-2009).

  39. S. Das, R. K. Singha, K. Das, A. Dhar and S. K. Ray, \93Silicon dioxide embedded germanium nanocrystals grown using molecular beam epitaxy for memory device applications\94, Proc. International Conference on NANO Science & Technology, Chennai, Feb.27-29,2008, C026.

  40. S. P. Mondal, V. S. Reddy, S. Das, A. Dhar and S. K. Ray, \93Memory characteristics of CdS nanocomposite/MEH-PPV[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylene-vinylene] heterostructures\94, Proc. International Conference on NANO Science & Technology, Chennai, Feb.27-29,2008, B084.

  41. S. Das, R. K. Singha, S. Manna, A. Dhar & S. K. Ray, \93Optical Properties of Self-assembled Ge(Si) Quantum Dots Grown on Si(001) by Molecular Beam Epitaxy\94 AOMD, pp. 206-212, 2008.

  42. R.K. Singha, K. Das, S. Das, A. Dhar & S. K. Ray, \93Characteristics of Ge Nanocrystals on Si (100) Grown by RF Magnetron Sputtering\94, Symposium-D: Semiconductor Photonics : Nanostructured Materials and Devices, Int. Conf. on Material for Advanced Technologies 2007, Singapore, p. 21, 1-6 July 2007.

  43. S. Das, R. K. Singha, K. Das, A. Dhar and S. K. Ray, \93Growth of Strained SiGe Layers and SiGe/Si Multiple Quantum Well Structures using Molecular Beam Epitaxy\94, IWPSD, , pp. 208-211, 2007,IIT Bombay.

  44. R. K. Singha, S. Das, K. Das, A. Dhar and S. K. Ray, \93Growth of Ge Nanoislands on Si (001) using Molecular Beam Epitaxy\94, IWPSD, pp. 205-207, 2007, IIT Bombay.

  45. V. Sivaji Reddy, S.Das, S.K. Ray and A. Dhar, (2007), \93Electrical Characteristics of Pentacene Thin Film Junctions\94, IWPSD, pp. 190-193, 2007, IIT Bombay.

  46. S. Das, K. Das, R. K. Singha, A. Dhar and S. K. Ray \93Electrical & optical Characteristics of Ge Nanocrystrals Embedded in Oxide Matrices for Floating Gate Memory Devices\94, , Proc.10thIntl. Conf. on Advanced Material (IUMRS-ICAM), Bangalore, India, V-8, 8-13 Oct, 2007.

  47. R. K. Singha, S. Das, K. Das, A. Dhar and S. K. Ray, \93Shspe and Size Distribution of Self-assembled Ge Islands on Si(001) Grown by Molecular Beam Epitaxy\94, Proc.of 10thInternational Conference on Advanced Material (IUMRS-ICAM 2007) Bangalore, India, p D-13, 8-13 Oct, 2007.

  48. A. Roy, S. Das, A. Dhar and S. K. Ray, \93The effect of buffer layer on electrical properties in Al/SrBi2Ta2O9/HfO2/Si ferroelectric gate oxide structure\94, Proc.10thIntl. Conf. on Advanced Material (IUMRS-ICAM), Bangalore, p. V-13, 8-13 Oct, 2007.

  49. R. K. Singha, S. Das, S.Majumdar, K. Das, A. Dhar and S. K. Ray \93Shape and size distribution of self-assembled Ge nanocrystals on Si (001) substrates grown by molecular beam epitaxy\94, , Proc.of Advanced Nano Materials \96 ANM 2007, Indian Institute of Technology, Bombay, 8-10 Jan, 2007.

  50. V. Sivaji Reddy, S. Das, Achintya Dhar and Samit Kumar Ray, \93Role of annealing environment on the properties of ITO thin films for organic light emitting diodes\94, Proc.of 3 rd International Conference on Computers and Devices for Communication (CODEC-2006), Kolkata, p. 296, Dec. 18-20, 2006.

Book Chapters

  1. R. K. Singha, K. Das, S. Das, A. Dhar and S. K. Ray, (2008) “Characteristics of Ge nanocrystals grown by RF magnetron sputtering”, in an Edited book “Semiconductor Photonics: Nanostructured Materials ad Devices” eds. S. J. Chua, J.H.Teng, O.Wada, R. de la Rue and X. H. Tang, Trans Tech Publications ltd., Switzerland, ISBN 0-87849-471-5.

  2. S. Das, R. K. Singha, S. Gangopadhyay, A. Dhar& S. K. Ray, “Luminescenec fine structures from Ge nanocrystals embedded in HfO2 matrix”, in an Edited book ‘1st Intl. Workshop on Si based nano-electronics and –photonics’ eds. S. Chiussi, P. Alpuim, J. Murota, P. Gonzalez, J. Serra, B. Leon, Netbiblo, Spain, ISBN: 978-84-9745-16-2.

Awards

  • Veena Arora Faculty Research Award in the Category of Early Career Award-2019, Indian Institute of Technology Delhi

  • Institute for Smart Structures and Systems (ISSS) Young Scientist Award-2019

  • INAE Young Engineer Award-2017, Indian National Academy of Engineering , India.

  • Young Faculty Research Fellowship Award, 2015 , MeitY, Govt. of India.

  • IEE EDS Region 9 Outstanding Paper Award as a co-author for the paper , “Surface Potential-Based Drain Current Analytical Model for Triple-Gate Junctionless Nanowire ransistors”, IEEE Transactions on Electron Devices 59, 3510 (2012).

Faculty Research Award_IIT Delhi

INAE Young Engineer Award

Myself and wife with PhD Supervisor _Prof. Samit K Ray _PhD Convocation

Institute for Smart Structures and Systems (ISSS) Young Scientist Award